R5070 HAMAMATSU | Alldatasheet
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. Compact, 25 mm(1 Inch) Diameter Good Near IR Response with Prismatic Window 10–stage, Head–On Type CHARACTERISTlCS (at 25 °C) Parameter Max. Typ.Min. Cathode Sensitivity Gain Anode Dark Current (after 30 min storage in darkness) Radiant at 420 nm Blue Sensitivity Index (CS 5-58) 4.3 × 105 A/W A/lm µA/lm Anode Pulse Rise Time 3 nA Electron Transit Time 230 0.25 100 130 Time Response Anode Sensitivity 2.2 Unit mA/W ns ns Transit Time Spread(FWHM) 1.1 ns 2.8 × 104 Luminous (2856 K) Radiant at 420 nm Luminous (2856 K) Anode characteristics are measured with the voItage distribution ratio shown below.NOTE: PHOTOMULTlPLlER TUBE R5070 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1250 Avarage Anode Current 0.1 250 Unit Vdc Vdc mA °CAmbient Temperature –80 to +50 GENERAL Parameter Description / Value Unit Spectral Response 300 to 900 nm Wavelength of Maximum Response 420 nm pF pF Photocathode MateriaI Multialkali Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes Minimum Effective Area 21 mm dia. Window Material Borosilicate glass Dynode Direct Interelectrode Capacitances Base SuitabIe Socket Circular–cage 1.2 1.8 14–pin glass base E678–14C (supplied) Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 3 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
DEC. 2001 IP HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E -mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it HOMEPAGE URL http://www.hamamatsu.com PHOTOMULTlPLlER TUBE R5070 Figure 1: Typical Spectral Response TPMHB0054ED Wavelength (nm) 400 +30 +35 +70 +150 +500 500 600 700 800 Ratio of Sensitivity Increase (%) Figure 2: Dimensional Outline and Basing Diagram (Unit: mm) Socket (E678–14C) TPMHA0033EA TACCA0004EA BOTTOM VIEW (BASING DIAGRAM) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) WAVELENGTH (nm) 0.01 0.1 100 200 300 400 500 600 700 800 900 1000 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY R5070 R5929 STANDARD MULTIALKALI 6 7 8 9 K DY1 DY6 DY5 DY7 DY9 P IC IC DY10 DY8 DY3 DY4 DY2 SHORT PIN 25.4±0.5 21MIN. 46.0±1.5 13MAX. FACEPLATE PHOTOCATHODE
14 PIN BASE
2.5 11.6 19.1 2- 3.5