R446 HAMAMATSU | Alldatasheet

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Figure 1: Typical Spectral Response TPMSB0090EB 100 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 0.01 0.1 100 QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. SPECIFICATIONS

FEATURES

GAnode Sensitivity (at 1000 V) GLow Drift and Hysteresis 185 nm to 870 nm 120 µA/lm 44 mA/W

600 A/lm

2.2 × 10

5 A/W

Multialkali Photocathode Sensitive to 870 nm 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type The R446 features high quantum efficiency, high current amplification, good S/N ratio and wide spectral response from UV to near infrared. The R446 employs a UV-trans- mitting glass envelope for UV sensitivity extension. The R446 is well suited for use in broad-band spectro- photometers, atomic absorption spectrophotometers, chromatographs, NOx analyzers and other precision pho- tometric instruments. Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Direct Interelectrode Capacitances Base Weight Operating Ambient Temperature Storage Temperature SuitabIe Socket SuitabIe Socket Assembly 185 to 870 330 Multialkali 8 × 24 UV glass Multialkali Circular-cage 11-pin base JEDEC No. B11-88 Approx. 45 -30 to +50 -30 to +50 E678–11A (Sold Separately) E717–63 (Sold Separately) E717–74 (Sold Separately) nm nm mm pF pF g MateriaI Minimum Effective Area Secondary Emitting Surface Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes

MAXIMUM RATINGS (Absolute Maximum Values) CHARACTERISTlCS (at 25 °C) PHOTOMULTIPLIER TUBES R446 NOTES Averaged over any interval of 30 seconds maximum. The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photo- cathode is illuminated. Hysteresis is temporary instability in anode current after light and voltage are applied. where q = Electronic charge (1.60 × 10 -19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wave- length of peak response. Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. Measured at a supply voltage adjusted to provide an anode sensitivity of 100 A/lm. ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = S 2q.ldb.G.∆f Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P Distribution Ratio 11 1 1 11 1 1 1 1 SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode Table 1:Voltage Distribution Ratio Hysteresis = × 100 (%)lmax. li lmin. TPMSB0002EA TIME max.l min.lil ANODE CURRENT 0 5 6 7 (minutes) Value 1250 250 0.1 V V mA UnitParameter Supply Voltage Average Anode Current A Typ. Unit µA/lm mA/W mA/W mA/W mA/W mA/W A/lm A/W A/W A/W A/W A/W nA W ns ns 16.7 (at 320 nm) 120 9.0 0.25 0.25 6.0 600 4.5 × 10 1.3 × 105 2.2 × 105 8.5 × 104 1.3 × 103 5.0 × 106 3.1 × 10-16 2.2 0.1 1.0 Max.Min. Quantum Efficiency (at Peak Wavelength) Luminous B Radiant Red/White Ratio C Blue Sensitivity Index D Luminous E Radiant Anode Pulse Rise Time I Electron Transit Time J Light Hysteresis Voltage Hysteresis at 194 nm at 254 nm at 330 nm at 633 nm at 852 nm at 194 nm at 254 nm at 330 nm at 633 nm at 852 nm 0.1 100 Parameter Cathode Sensitivity Anode Sensitivity Gain E Anode Dark Current F (After 30 min Storage in Darkness) ENI (Equivalent Noise Input) H Time Response E Anode Current Stability K Between Anode and Cathode Between Anode and Last Dynode

JUL. 2006. IP Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) Warning–Personal Safety Hazards Electrical Shock –Operating voltages applied to this device present a shock hazard. TPMSA0008EA PHOTOMULTIPLIER TUBES R446 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 28.5 ± 1.5 8 MIN. PHOTOCATHODE 24 MIN. 49.0 ± 2.5 80 MAX. 94 MAX. 32.2 ± 0.5

11 PIN BASE

JEDEC No. B11-88 Bottom View (Basing Diagram) Figure 8: D Type Socket Assembly (Unit: mm) Figure 7: Socket (Unit: mm) Sold Separately Sold Separately TACCA0002EH TACCA0277EA TACCA0064EA 3.5 418 * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incor- porate a DC to DC converter type high voltage power supply. POTTING COMPOUND R1 to R10 C1 to C3 : 330 kΩ : 10 nF 3.5 33.0 ± 0.3 49.0 ± 0.3 29.0 ± 0.3 38.0 ± 0.3 40.7 30.0450 ± 10 31.0 ± 0.5 HOUSING (INSULATOR) R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) -HV AWG22 (VIOLET) P K POWER SUPPLY GND AWG22 (BLACK) SOCKET PIN No.PMT E717-63 E717-74 E678-11A R1 to R10 C1 to C3 : 330 kΩ : 10 nF R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL OUTPUT (A) -HV (K) P K GND (G) SOCKET PIN No. * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. PMT 26.0±0.2 22.4±0.2 32.0±0.5 26.0±0.2 32.0±0.5 72.7 14.0±0.5 30° 10° 0.7 4- 2.8 HOUSING (INSULATOR) R13 K A G TOP VIEW SIDE VIEW BOTTOM VIEW HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it WEB SITE www.hamamatsu.com