R3788 HAMAMATSU | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
High Sensitivity, Bialkali Photocathode 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type GENERAL
FEATURES
Parameter Description Unit Spectral Response Wavelength of Maximum Response 185 to 750 nm nm Photocathode MateriaI 420 Structure R3788 160 to 750 nmR4332 4p FAnode to Last Dynode 6p FAnode to All Other Electrodes R3788 R4332 Minimum Effective Area Bialkali Secondary Emitting Surface Bialkali mm Window Material Weight 8 24 g45 Dynode Direct Interelectrode Capacitances Base SuitabIe Socket Assembly UV glass Fused silica Circular-cage Number of Stages 9 11-pin base JEDEC No. B11-88 E717–21(option) SuitabIe Socket E678–11A (option) PHOTOMULTlPLlER TUBES R3788, R4332 Spectral Response
APPLICATIONS
Fluorescence Spectrophotometers Emission Spectrophotometers Atomic Absorption Spectrophotometers High Cathode Sensitivity High Anode Sensitivity (at 1000V) 185 to 750 nm 160 to 750 nm 120 A/lm Typ. 90mA/W Typ. 40% Typ. (R4332) 1200A/lm Typ. 9.0 105 A/W Typ. Figure 1: Typical Spectral Response TPMSB0081EA 0.01 0.1 100 100 200 300 400 500 600 700 800 WAVELENGTH (nm) PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) R3788 R4332 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.
MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1250 250 0.1 Vdc Vdc mAAverage Anode Current A Unit CHARACTERISTlCS (at 25 ) NOTES Parameter Min. Max. R3788 Typ. Cathode Sensitivity Anode Dark Current F (After 30minutes Storage in the darkness) 55 0 Anode Current Stability K Averaged over any interval of 30 seconds maximum. The light source is a tungsten filament lamp operated at a distribution tem- perature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. Measured with the same light source as Note B and with the voltage distri- bution ratio shown in Table 1 below. Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = Electronic charge (1.60 10 -19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wave- length of peak response. The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. ENI = S 2q.ldb.G . f Light Hysteresis Voltage Hysteresis 0.1 1.0 Radiant at 194nm 31 Red/White Ratio C 0.01 Blue D 10 210nm 50 420nm 90 Anode Pulse Rise Time H 2.2 Electron Transit Time I 22 Transit Time Spread (TTS) J 1.2 Time Response E Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P Distribution Ratio 1 111111111 SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode, P : Anode Quantum Efficiency at Peak Wavelength 100 120 (at 250nm) Anode Sensitivity Gain E ENI(Equivalent Noise Input) G Unit PHOTOMULTlPLlER TUBES R3788, R4332 Luminous B Radiant at 194nm 210nm 420nm Luminous E 1200500 5.0 105 9.0 105 1.0 107 1.4 10-16 Min. Max. R4332 Typ. 55 0 n A 0.1 1.0 60 mA/W 0.01
10 A/lm-b
2.2 1.2 ns ns ns 100 120 A/lm (at 210nm) 6.0 105 A/W
1200 A/lm500
6.8 105 A/W 9.0 105 A/W 1.0 107 1.4 10-16 W Table 1:Voltage Distribution Ratio 3.1 105
PHOTOMULTlPLlER TUBES R3788, R4332 TPMS1021E01 FEB. 1994 Figure 6: Dimensional Outline and Basing Diagram Figure 7: Socket E678-11A (Option) Unit : mm Figure 8: D Type Socket Assembly E717-21 (Option) BOTTOM VIEW (BASING DIAGRAM) Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 se- ries DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. POTTING COMPOUND TACCA0002ED R to R10 C1 to C3 : 330k : 0.01 F 3.5 33.0 0.3 49.0 0.3 38.0 0.3 4.8 41.0 0.5450 10 31.0 0.5 HOUSING (INSULATOR) R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) –HV AWG22 (VIOLET) P K POWER SUPPLY GND AWG22 (BLACK) SOCKET PIN No.PMT 28.5 1.5 8MIN.T9 BULB PHOTOCATHODE 24MIN. 49.0 0.25 80MAX. 94MAX. 32.2 0.5
11 PIN BASE
JEDEC No.B11-88 6 7 111 DY6 DY7 DY8 DY9 P KDY1 DY2 DY3 DY4 DY5 DIRECTION OF LIGHT TPMSA0005EB 3.5 TACCA0008EB HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741