R2658

R2658 HAMAMATSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

FEATURES

Parameter Description/ValueUnit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Direct Interelectrode Capacitances Base Weight Suitable Socket (Option) Suitable Socket Assembly (Option) nm nm mm pF pF g 185 to 1010 400 InGaAs (Cs) 3 × 12 UV glass Cu-BeO Circular-cage Approx. 4 Approx. 6 11-pin base JEDEC No. B11-88 Approx. 45 E678-11A E717-63 Material Minimum Effective Area Secondary Emitting Surface Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes PHOTOMULTIPLIER TUBES R2658 R2658P (For Photon Counting) Information furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. High QE in Near IR Region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared Region, etc. Figure 1: Typical Spectral Response TPMSB0150EA The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photo- cathode, and yet offers low dark current. The dark current is 2 orders lower than the commercial S-1 photocathode. Therefore, they are well suited for low light detection in the near IR region including fluores- cence lifetime measurements. Time response, gain, and dimensions are identical with the conventional 28 mm (1-1/8 inch) diameter side-on tubes with a GaAs photocathode. The R2658P is a photon counting version of the R2658 with low dark counts. 100 0.1 0.01 200100 400 600 800 1000300 500 700 900 1100 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY

MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Supply Voltage Average Anode Current A Ambient Temperature Vdc Vdc µA 1500 250 -80 to +50 Between Anode and Cathode Between Anode and Last Dynode PHOTOMULTIPLIER TUBES R2658, R2658P CHARACTERISTICS (at 25 °C) Table 1: Voltage Distribution Ratio Parameter Min. Unit Cathode Sensitivity Anode Sensitivity Gain D Anode Dark Current E After 30 minute storage in the darkness Anode Dark Count (for the R2658P) F ENI (Equivalent Noise Input) G Time Response D Anode Current Stability K µA/lm mA/W mA/W mA/W mA/W mA/W mA/W A/lm A/W A/W A/W A/W A/W A/W nA s-1(cps) W ns ns 0.02 0.16 0.25 Max. 300 Typ. 0.13 100 7.6 0.4 3.2 × 10 3.7 × 103 6.4 × 103 3.0 × 103 1.2 × 103 1.6 × 102 1.6 × 105 1.1 × 10-15 2.0 Quantum Efficiency Luminous B Radiant Red/White Ratio C Luminous D Radiant Anode Pulse Rise Time H Electron Transit Time J Current Hysteresis Voltage Hysteresis at 330 nm at 1000 nm at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm at 1000 nm at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm at 1000 nm NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/white ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and the voltage distribution ratio as Note D after 30 minute storage in the darkness. F: Measured at the voltage producing the gain of 1 × 10 and the voltage distribution ratio shown in table 1 below. The photocathode is cooled at -20 °C. G: ENI is an indication of the photo-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = Electronic charge (1.60 × 10 -19 coulomb) ldb = Anode dark current (after 30 minute storage) in amperes G = Gain Δf = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire pho- tocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K. Hysteresis is temporary instability in anode current after light and voltage are applied. Supply Voltage= 1250 Vdc K: Cathode, Dy: Dynode, P: Anode Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P ENI = 2q•ldb•G•Δf S

Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) TPMS1044E02 MAR. 2000 TPMSA0012EC TACCA0064EA TACCA0002EG TPMSC0040EA Figure 7: Optional Accessories (Unit: mm) (a) E678-11A (Socket) (a) E717-63 (Socket Assembly) PHOTOMULTIPLIER TUBES R2658, R2658P 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 28.5 ± 1.5 3MIN. BULB PHOTOCATHODE 12MIN. 49.0 ± 2.5 80MAX. 94MAX. 32.2 ± 0.5

11 PIN BASE

JEDEC No. B11-88 PHOTOCATHODE GRILL DIRECTION OF LIGHT SHIELD ANODE BULB 4 3 Detail of Tube (Cross Section of Top View) 1 to 9: DYNODES 3.5 418 Warning-Personal Safety Hazards Electrical Shock — Operating voltage applied to this device presents shock hazard. HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 HOMEPAGE URL http://www.hamamatsu.com POTTING COMPOUND R to R10 C1 to C3 : 330kΩ : 0.01µF HOUSING (INSULATOR) R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) -HV AWG22 (VIOLET) P K POWER SUPPLY GND AWG22 (BLACK) SOCKET PIN No.PMT 3.5 33.0 ± 0.3 49.0 ± 0.3 38.0 ± 0.3 30450 ± 10 31.0 ± 0.5