R2496 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Direct Interelectrode Capacitances Base Weight Suitable Socket nm nm mm dia. pF pF g 160 to 650 420 Bialkali Fused silica Linear focused 0.7 2.0 11-pin glass base Approx. 5 E678-11N (supplied) Material Minimum Useful Area Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes PHOTOMULTIPLIER TUBE R2496 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. For Positron CT Scanner Using BaF2 Scintillator 10mm (3/8 Inch) Diameter, 8-Stage, Head-On, Bialkali Photocathode CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1500 0.03 -80 to +50 Vdc mA Between Anode and Cathode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30 min. storage in darkness) Time Response Luminous (2856K) Radiant at 420nm Blue Luminous (2856K) Radiant at 420nm Anode Pulse Rise Time Electron Transit Time 9.5 100 8.0 × 10 1.1 × 106 0.7 9.0 µA/lm mA/W µA/lm-b A/lm A/W nA ns ns Typ. Max. Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Distribution Ratio K Dy1 Dy2 1.5 Dy3 1.5 Dy4 Dy5 Dy6 Dy7 Dy8 P
FEATURES
Coincidence Resolving Time Fast Time Response
PHOTOMULTIPLIER TUBE R2496 Figure 1: Typical Spectral Response TPMH1229E01 SEPT. 1998 HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 TPMHB0566EA Figure 2: Typical Gain Characteristics TPMHB0567EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0442EA TACCA0043EA Socket (E678-11N) 4.3 9.5 10.5 9.5 100 0.1 0.01 200 600 800 400 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 5 6 7 IC DY1 DY3 DY5 DY7 P DY8 DY6 DY4 DY2 K SHORT PIN FACEPLATE PHOTOCATHODE
11 PIN BASE
8MIN. 10MAX. 45.0 – 1.5 10.5 – 0.5 107 106 105 104 103 500 1000 700 1500 2000 SUPPLY VOLTAGE (V) GAIN