R1893 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm dia. 160 to 320 240 Cs-Te Synthetic Silica Linear-focused 11-pin glass base E678-11N (supplied) Material Minimum Effective Area Structure Number of Stages PHOTOMULTIPLIER TUBE R1893 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. 10 mm (3/8 Inch) Diameter, 8-Stage, Cs-Te Photocathode, Head-On Type CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1500 250 0.01 -80 to +50 Vdc Vdc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30min. storage in darkness) Time Response Radiant at 254nm Radiant at 254nm Anode Pulse Rise Time Electron Transit Time 1.2 × 10 3.6 × 10 1.5 × 105 0.5 0.8 7.8 mA/W A/W nA ns ns 2.5 Typ. Max. Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 P NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
PHOTOMULTIPLIER TUBE R1893 Figure 1: Typical Spectral Response TPMH1260E01 MAR. 1999 TPMHB0610EA Figure 2: Typical Gain Characteristics TPMHB0611EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0442EA TACCA0043EA Socket (E678-11N) HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 5 6 7 IC DY1 DY3 DY5 DY7 P DY8 DY6 DY4 DY2 K SHORT PIN FACEPLATE PHOTOCATHODE
11 PIN BASE
8MIN. 10MAX. 45.0 – 1.5 10.5 – 0.5 4.3 9.5 10.5 9.5 100 0.1 0.01 150100 200 250 300 350 400 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 200 1500 20001000 1200700500 102 103 104 105 106 107 108 GAIN SUPPLY VOLTAGE (V)