R13003F1 FOSHAN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 耐压高，快速转换。 High Voltage Capability High Speed Switching. 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. PIN1：Emitter PIN 2 ：Collector PIN 3 ：Base 放大及印章代码 / hFE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 1 2 3

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCES 700 V Collector to Emitter Voltage VCEO 450 V Emitter to Base Voltage V EBO 9.0 V Collector Current - Continuous I C 0.5 A Collector Power Dissipation P C 1.0 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO IC=1mA I E=0 700 V Collector to Emitter Breakdown Voltage VCEO IC=10mA I B=0 450 V Emitter to Base Breakdown Voltage VEBO IE=1mA I C=0 9.0 V Collector Cut-Off Current I CBO V CB=700V I E=0 0.1 mA Collector cut-off current ICEO V CE=450V I B=0 0.1 mA Emitter Base Cut-Off Current I EBO V EB=9.0V I C=0 0.1 mA DC Current Gain h FE V CE=5.0V I C=200mA 10 40 Collector to Emitter Saturation Voltage VCE(sat) IC=200mA I B=40mA 0.5 V Base to Emitter Saturation Voltage V BE(sat) IC=200mA I B=40mA 1.2 V Transition Frequency f T VCE=10V I C=50mA f=1.0MHz 5.0 MHz Fall time t f VCE=5V I C=100mA (UI9600) 0.6 μs Storage time t S 4.0 μs 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve S O A ( D C ) P C-TC h FE-Ic h FE-Ic Vces-IC Vbes-IC tS- T a h FE-Ta

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： 13003：  为型号代码 Note: BR: Company Code. 13003: Product Type. F1： Specification Code. **: Lot No. Code,code change with Lot No. BR ** 13003

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92 1,000 10 10,000 5 50,000 135×190 237×172×102 560×245×195 1,000 10 10,000 10 100,000 135×190 237×172×102 560×245×375 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92 3,000 1 120 10 30,000 328×230×42 小箱 480×346×235， 大箱 547×407×268 使用说明 / N o t i c e s