QM2404D DOINGTER | Alldatasheet
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www.doingter.cn — — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=45A,RDS(ON)< 8mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current 45 A Continuous Drain Current-TC=100℃ 28 IDM Pulsed Drain Current 130 A PD Power Dissipation 45 W EAS Single pulse avalanche energy (Note 5) 180 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case(Note 2) 3.2 ℃/W D S G QM2404D All d ata sheet.com
www.doingter.cn — — Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=20V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.7 1.2 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 8 mΩ VGS=4.5V,ID=20A --- 8.5 13 mΩ VGS=2.5V,ID=20A --- 14 18 mΩ GFS Forward Transconductance VDS=5V,ID=20A 10 --- --- S Dynamic Characteristics(Note 4) Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz --- 1540 --- pFCoss Output Capacitance --- 210 --- Crss Reverse Transfer Capacitance --- 200 --- Switching Characteristics(Note 4) td(on) Turn-On Delay Time VGS=10V,VDS=10V, RL=0.5Ω,RGEN=3Ω --- 4.5 --- ns tr Rise Time --- 9.2 --- ns td(off) Turn-Off Delay Time --- 18.7 --- ns tf Fall Time --- 3.3 --- ns Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=20A --- 23.5 --- nC Qgs Gate-Source Charge --- 2.8 --- nC Qgd Gate-Drain “Miller” Charge --- 5.75 --- nC Drain-Source Diode Characteristics 6.3 QM2404D All d ata sheet.com
www.doingter.cn — — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance QM2404D 0086-0755-8278-9056 All d ata sheet.com