QM0004U DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=15A,RDS(ON)< mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 15 A Continuous Drain Current-TC= 0℃ 12 Pulsed Drain Current1 60 EAS Single Pulse Avalanche Energy 16 mJ PD Power Dissipation,TC=25℃ 50 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3 ℃/W RƟJA Thermal Resistance,Junction to Ambient --- DG D S QM0004U All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 2 3 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=10A --- 75 100 mΩ VGS=4.5V,ID=8A --- 100 115 GFS Forward Transconductance VDS=0V, ID=0A --- --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 890 --- pF Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 25 --- Switching Characteristics td(on) Turn-On Delay Time3 VDD=25V, ID=8A, VGS=10V,RGEN=1Ω --- 14.2 --- ns tr Rise Time2,3 --- 34 --- ns td(off) Turn-Off Delay Time --- 40.4 --- ns tf Fall Time2,3 --- 6 --- ns Qg Total Gate Charge3 VGS=10V, VDS=80V, ID=10A --- 24 --- nC Qgs Gate-Source Charge --- 5 --- nC Qgd Gate-Drain “Miller” Charge --- 8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=8A --- 0.8 1.2 V QM0004U All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time --- 35 --- Ns qrr Reverse Recovery Charge --- 121 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) ISD=8A, VGS=0V di/dt=100A/μs ① Pulse width limited by maximum allowable junction temperature ② Limited by TJmax, starting TJ = 25° C, L = 0.1mH,RG = 25Ω, IAS = 18A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (° C) Fig2. VGS(TH) Voltage Vs. Temperature Tc, Case Temperature (° C) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate Voltage ID, Drain-Source Current (A) Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) QM0004U All d ata sheet.com
www.doingter.cn — 4 — VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area ISD, Reverse Drain Current (A) -ID - Drain Current (A) VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage VGS, Gate-Source Voltage (V) C, Capacitance (pF) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance ZqJA Normalized Transient Thermal Resistance QM0004U 0086-0755-8278-9056 All d ata sheet.com