QB005DNG DOINGTER | Alldatasheet

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www.doingter.cn — 1 — QB005DNG Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=50A,RDS(ON)<4.8mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. 6) ESD Protection(2000v) Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID ** Continuous Drain Current- Tj=25℃ 50 A Continuous Drain Current-TC=100℃1 34 IDM ** 68 PD Power Dissipation 31 W IS 34 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC * Thermal Resistance,Junction to Ambient 4 ℃/W Pulsed Drain Current Diode Forward Current (1,2,3) D1 D2 G1 S1 S2 G2 (4) (5) Bottom (D1/D2) (6,7,8) A ll data sheet.com

www.doingter.cn — 2 — QB005DNG Package Marking and Ordering Information： Part NO. Marking Package QB005DNG B005DN DFN3*3-8E Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=16V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0A --- --- ±10 UA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 1 V RDS(ON) a Drain-Source On Resistance VGS=4.5V,ID=20A --- 3.5 4.8 mΩ VGS=2.5V,ID=0.5A --- 4.5 5.5 Dynamic Characteristics Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz --- 2148 pF Coss Output Capacitance --- 309 Crss Reverse Transfer Capacitance --- 292 Qg Gate Charge 66.8 nc Qgs Gate-Source Charge 8 Qgd Gate-Drain Charge 8 Switching Characteristics td(on) Turn-On Delay Time --- 0.25 ns tr Rise Time --- 0.6 ns td(off) Turn-Off Delay Time --- 3.1 ns tf Fall Time --- 4.3 ns Drain-Source Diode Characteristics VSD a Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V I = 20 A GS DS D V =1 0 V, V = 10 V, RG = 4.5Ω , RL= 0.5 Ω, I = 20 A DS GS D A ll data sheet.com

www.doingter.cn — 3 — QB005DNG Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) * Surface Mounted on 1 in pad area, t  10 sec Pulse width  300 s, duty cycle  2 % * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2% b : Guaranteed by design, not subject to production testing Power Capability Current Capability Pt ot - P ower ( ID - D rain Current (A) Tmp – Mounting Point Temp. (° C) Tmp – Mounting Point Temp. (° C) Operating Transient Thermal Impedance ID - D rain Current (A) N ormalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) .01 0.1 1 10 100 .01 0.1 100 300 us s Rds(on) Limit TC= o C 10m s 100 ms DC 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC= o C ,VG= 10V E-4 1E-3 0.01 0.1 1 10 100 E-3 0.01 0.1 M ounted on 1in pad RJC :4 o C S ingle Pulse D uty = 0.5 A ll data sheet.com

www.doingter.cn — — QB005DNG Output Characteristics On Resistance ID - D rain Current (A) RDS (ON) - O n Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS (ON) - O n Resistance (mΩ) N ormalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (° C) 0 5 10 15 20 25 30 35 40 45 50 VGS= 4.5V VGS= 2.5V 50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =250A .5V VGS= 0 1 2 3 4 5 6 7 8 9 10 IDS= 20A A ll data sheet.com

www.doingter.cn — — QB005DNG Normalized On Resistance Diode Forward Current N ormalized On Resistance IS - S ource Current (A) Tj - Junction Temperature (° C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - C apacitance (pF) VGS - G ate-S ource Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj= o C: 4m VGS = 10V IDS = 20A 0 5 10 15 20 500 1000 1500 2000 2500 3000 3500 4000 4500 Fr equency=1MHz C rss C oss C iss Tj= o C Tj= 150 o C 0 5 10 15 20 25 30 35 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= 10V IDS= 20A A ll data sheet.com