BSC119N03S INFINEON | Alldatasheet
Document overview
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Technical content
Features
- Fast switching MOSFET for SMPS
- Optimized technology for notebook DC/DC converters
- Qualified according to JEDEC 1) for target applications
- N-channel
- Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- Avalanche rated
- Pb-free plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 30 A T C=100 °C 30 T A=25 °C, R thJA=45 K/W2) 11.9 Pulsed drain current I D,pulse T C=25 °C3) 120 Avalanche energy, single pulse E AS I D=30 A, R GS=25 Ω 60 mJ Reverse diode dv /dt dv /dt I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 43 W T A=25 °C, R thJA=45 K/W2) 2.8 Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 30 V R DS(on),max 11.9 mΩ I D 30 A Product Summary Type Package Ordering Code Marking BSC119N03S G P-TDSON-8 Q7042 S4292 119N03S P-TDSON-8 P-TDSON-8 Rev. 1.01 page 1 2004-12-15
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.9 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm2 cooling area2) -- 4 5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 14.4 18 mΩ V GS=10 V, I D=30 A - 9.9 11.9 Gate resistance R G -1- Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 22 43 - S 1)J-STD20 and JESD22 Values 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 Rev. 1.01 page 2 2004-12-15
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1030 1370 pF Output capacitance C oss - 370 490 Reverse transfer capacitance Crss -5 0 7 5 Turn-on delay time t d(on) - 3.8 5.8 ns Rise time t r - 3.4 5.1 Turn-off delay time t d(off) -1 5 2 3 Fall time t f - 2.6 3.9 Gate Charge Characteristics3) Gate to source charge Q gs - 3.3 4.4 nC Gate charge at threshold Q g(th) - 1.6 2.2 Gate to drain charge Q gd - 2.1 3.2 Switching charge Q sw - 3.8 5.4 Gate charge total Q g -8 1 1 Gate plateau voltage V plateau - 3.2 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -79 n C Output charge Q oss V DD=15 V, V GS=0 V -8 1 1 Reverse Diode Diode continous forward current I S - - 30 A Diode pulse current I S,pulse - - 120 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.93 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 3) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=15 A, R G=2.7 Ω V DD=15 V, I D=15 A, V GS=0 to 5 V Rev. 1.01 page 3 2004-12-15
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 0.1 100 1000 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-510-6 101 100 10-1 10-2 0.01 0.1 0 0 0 0 0 0 t p [s] Z thJC [K/W] 0 40 80 120 160 T C [°C] P tot [W] 0 40 80 120 160 T C [°C] I D [A] Rev. 1.01 page 4 2004-12-15
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3.2 V 3.4 V 3.7 V 4 V 4.5 V 10 V 0 1 02 03 04 05 0 I D [A] R DS(on) [mΩ ] 25 °C 150 °C 012345 V GS [V] I D [A] 0 1 02 03 04 05 06 0 I D [A] g fs [S] 2.8 V 3 V 3.2 V 3.4 V 3.7 V 4 V 4.5 V 10 V 0123 V DS [V] I D [A] Rev. 1.01 page 5 2004-12-15
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 20 µA 200 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 10 100 1000 10000 01 0 2 0 3 0 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 103 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] Rev. 1.01 page 6 2004-12-15
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=15 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA 6 V 15 V 24 V 048 1 2 1 6 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C 125 °C 100 1 10 100 1000 t AV [µs] I AV [A] Rev. 1.01 page 7 2004-12-15
P-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.01 page 8 2004-12-15
P-TDSON-8: Tape Dimensions in mm Rev. 1.01 page 9 2004-12-15
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