Q60215Y1113 | DigiCamel IC Datasheet

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Read Q60215Y1113 online.

BPY62 AMSCO | Alldatasheet

Document overview

Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
PDF pages: 16

Technical content

2 | Version 1.4 | 2023-01-24 Metal Can TO18 BPY 62 Silicon NPN Phototransistor

Applications

Factory Automation

Features

Package: hermetically sealed - Spectral range of sensitivity: (typ) 400 ... 1100 nm - Hermetically sealed metal can package (TO-18), suitable up to 125 °C - Base connection - High photosensitivity - Available in groups

3 | Version 1.4 | 2023-01-24

Ordering Information

Type Photocurrent 1) Ordering Code VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BPY 62 900 ... 3550 µA Q60215Y0062 BPY 62-4 1400 ... 2240 µA Q60215Y1113 BPY 62-3/4 900 ... 2240 µA Q62702P5198 Only one bin within one packing unit.

4 | Version 1.4 | 2023-01-24 Maximum Ratings TA = 25 °C Parameter Symbol Values Operating temperature Top min. max. -40 °C 125 °C Storage temperature Tstg min. max. -40 °C 125 °C Collector-emitter voltage VCE max. 35 V Collector current IC max. 100 mA Collector surge current τ ≤ 10 µs ICS max. 200 mA Emitter-collector voltage VEC max. 7 V Total power dissipation Ptot max. 200 mW

5 | Version 1.4 | 2023-01-24 Characteristics TA = 25 °C Parameter Symbol Values Wavelength of max sensitivity λS max typ. 830 nm Spectral range of sensitivity λ10% typ. 400 ... 1100 nm Dimensions of chip area L x W typ. 0.55 x 0.55 mm x mm Radiant sensitive area A typ. 0.11 mm² Half angle φ typ. 8 ° Photocurrent VCE = 5 V; Std. Light A; Ev = 1000 lx IPCE typ. 4800 µA Photocurrent of collector-base photodiode Ee = 0.5 mW/cm²; λ = 950 nm; VCB = 5 V IPCB typ. 5.5 µA Photocurrent of collector-base photodiode Ev = 1000 lx; Std. Light A ; VCB = 5 V IPCB typ. 17 µA Dark current VCE = 20 V ICE0 typ. max. 1 nA 50 nA Rise time IC = 1 mA; λ = 950 nm; VCC = 5 V; RL = 1 kΩ tr typ. 8 µs Fall time IC = 1 mA; λ = 950 nm; VCC = 5 V; RL = 1 kΩ tf typ. 8 µs Collector-emitter saturation voltage 2) IC = IPCE,min X 0.3; λ = 950 nm; Ee = 0.5 mW/cm² VCEsat typ. 155 mV Capacitance VCE = 0 V; f = 1 MHz; E = 0 CCE typ. 7.5 pF Capacitance VCB = 0 V; f = 1 MHz; E = 0 CCB typ. 14 pF Capacitance VEB = 0 V; f = 1 MHz; E = 0 CEB typ. 19 pF

6 | Version 1.4 | 2023-01-24 Photocurrent Groups TA = 25 °C Group Photocurrent 1) Photocurrent 1) VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² min. max. IPCE IPCE 3 900 µA 1400 µA 4 1400 µA 2240 µA 5 2240 µA 3550 µA Only one bin within one packing unit.

7 | Version 1.4 | 2023-01-24 Relative Spectral Sensitivity 3), 4) Srel = f (λ) 400 nm OHF04043 100 λ relS 500 600 700 800 900 1100 Directional Characteristics 3), 4) Srel = f (φ)

8 | Version 1.4 | 2023-01-24 Photocurrent 3), 4) IPCE = f (Ee) ; VCE = 5 V Collector Current 3), 4) ICE = f (VCE); IB = Parameter Collector Current 3), 4) ICE = f (VCE); IB = Parameter Dark Current 3), 4) ICE0 = f (VCE) ; E = 0 OHF04049 VCE 010 101 10-1 10-2 CEOI nA 0V 5 10 15 20 25 30 35

9 | Version 1.4 | 2023-01-24 Collector-Emitter Capacitance 3), 4) CCE = f (VCE); f = 1 MHz; E = 0 pF OHF04051 CEC CEV 10-3 10-2 10-1 100 101 102V Collector-Base Capacitance 3), 4) CCB = f (VCB); f = 1 MHz; E = 0 pF OHF04053 CBC CEV 10-3 10-2 10-1 100 101 102V Emitter-Base Capacitance 3), 4) CEB = f (VEB); f = 1 MHz; E = 0 pF OHF04054 EBC EBV 10-3 10-2 10-1 100 101 102V

10 | Version 1.4 | 2023-01-24 Dark Current 3) ICE0 = f (TA); VCE = 5 V; Ee = 0 mW/cm² nA OHF04050 CEOI AT -210 -110 100 110 102 310 104 -250 25 50 75 100˚C Photocurrent 3) IPCE,rel = f (TA); VCE = 5 V

11 | Version 1.4 | 2023-01-24 Dimensional Drawing 5) ø5.6 (0.220) ø5.3 (0.209) 2.54 (0.100) spacing ø4.8 (0.189) E C B(2.7 (0.106)) 5.1 (0.201) 4.8 (0.189) 14.5 (0.571) 12.5 (0.492) ø0.45 (0.018) Radiant GMOY6019 ø4.6 (0.181) 5.4 (0.213) 6.2 (0.244) Chip position sensitive area 0.9 (0.035) 1.1 (0.043) 1.1 (0.043) 0.9 (0.035) Further Information: Approximate Weight: 332.0 mg Package marking: Emitter

12 | Version 1.4 | 2023-01-24 TTW Soldering IEC-61760-1 TTW 00 s OHA04645 100 150 200 250 300 t T 235 ˚C - 260 ˚C First wave 20 40 60 80 100 120 140 160 180 200 220 240 Second wave 10 s max., max. contact time 5 s per wave Preheating 100 ˚C 120 ˚C 130 ˚C Typical Cooling ca. 3.5 K/s typical ca. 2 K/s ca. 5 K/s Continuous line: typical process Dotted line: process limits < 150 K Notes Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit www.osram-os.com/appnotes

13 | Version 1.4 | 2023-01-24 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on our website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications Our components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. Our products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using our components in product safety devices/ applications or medical devices/applications, buyer and/or customer has to inform our local sales partner immediately and we and buyer and /or customer will analyze and coordinate the customer-specific request between us and buyer and/or customer.

14 | Version 1.4 | 2023-01-24 Glossary 1) Photocurrent: The photocurrent values are measured (by irradiating the devices with a homogenous light source and applying a voltage to the device) with a tolerance of ±11 %. 2) IPCEmin: IPCEmin is the min. photocurrent of the specified group. 3) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 4) Testing temperature: TA = 25°C (unless otherwise specified) 5) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.

15 | Version 1.4 | 2023-01-24

Revision History

1.4 2023-01-24 Brand New Layout

Product Information

Q60215Y1113 specifications and overview.

Summary

Silicon NPN Phototransistor Version 1.4 2023-01-24

Description

Silicon NPN Phototransistor Version 1.4 2023-01-24

Source title Q60215Y1113 Datasheet(PDF) - ams AG

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