PXT8550 HTSEMI | Alldatasheet
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TRANSISTOR(PNP)
FEATURES
MARKING: Y2 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -1.5 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V (BR)CBO I C = -100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -0.1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA, I C =0 -5 V Collector cut-off current I CBO V CB = -40 V,I E =0 -0.1 μA Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 μA Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μA h FE(1) V CE = -1V, I C = -100mA 85 400 DC current gain h FE(2) V CE = -1V, I C = -800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B = -80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B = -80mA -1.2 V Base-emitter on voltage V BE(on) Ic=-1V,V CE =-10mA -1 V Base-emitter positive favor voltage V BEF I B =-1A -1.55 V Transition frequency f T V CE = -10V, I C = -50mA 100 MHz output capacitance C ob V CB =-10V,I E =0,f=1MHz 20 pF CLASSIFICATION OF h FE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER PXT8 550 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu