PXT8550 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors PXT8550 TRANSISTOR (PNP)

FEATURES

MARKING: Y2 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -1.5 A P C Collector Power Dissipation 0.5 W ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -0.1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA, I C =0 -5 V Collector cut-off current I CBO V CB = -40 V,I E =0 -0.1 μA Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 μA Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μA h FE(1) V CE = -1V, I C = -100mA 85 400 DC current gain h FE(2) V CE = -1V, I C = -800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B = -80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B = -80mA -1.2 V Base-emitter on voltage V BE(on) Ic=-1V,V CE =-10mA -1 V Base-emitter positive favor voltage V BEF I B =-1A -1.55 V Transition frequency f T V CE = -10V, I C = -50mA 100 MHz output capacitance C ob V CB =-10V,I E =0,f=1MHz 20 pF CLASSIFICATION OF h FE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 RΘJA Thermal Resistance From Junction To Ambient 250 www.cj-elec.com 1www.cj-elec.com ℃/W D,Aug,2016

-10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 100 -1 -10 100 -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 100 0 25 50 75 100 125 150 100 200 300 400 500 600 COMMON EMITTER V CE =-1V T a =25 T a =100 I C V BE BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) COMMON EMITTER T a =25 -500uA -450uA -400uA -350uA -300uA -250uA -200uA -150uA -100uA I B =-50uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) β=10 T a =25 T a =100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat -300 -30 -1500-300-30-3 300 COMMON EMITTER V CE =-1V 600 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C h FE C ob C ib -1500 -300 -30 -3-0.5 -0.2 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) T a =25 T a =100 T a =25 T a =100 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat 300 -30-3 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =-10V T a =25 I C f T 500 P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) Typical Characteristics www.cj-elec.com 2 A,Jun,2014www.cj-elec.com D,Aug,2016

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3www.cj-elec.com D,Aug,2016

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