PXT8050 HTSEMI | Alldatasheet
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FEATURES
z Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 1.5 A P C Collector Power dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 μA Emitter cut-off current I CEO V CE =20V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =1V, I C =100mA 85 400 DC current gain h FE(2) V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C =800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B =80mA 1.2 V Base-emitter voltage V BE V CE =1V, I C =10mA 1 V Base-emitter positive favor voltage V BEF I B =1A 1.55 V Transition frequency f T V CE =10V,I C =50mA,f=30MHz 100 MHz output capacitance C ob V CB =10V,I E =0,f=1MHz 15 pF CLASSIFICATION OF h FE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER PXT8 050 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu