PXT8050 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PXT8050 TRANSISTOR ( NPN)

FEATURES

z Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1.5 A P C Collector Power dissipation 0.5 W T Storage Temperature 150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 μA Emitter cut-off current I CEO V CE =20V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =1V, I C =100mA 85 400 DC current gain h FE(2) V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C =800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B =80mA 1.2 V Base-emitter voltage V BE V CE =1V, I C =10mA 1 V Base-emitter positive favor voltage V BEF I B =1A 1.55 V Transition frequency f T V CE =10V,I C =50mA,f=30MHz 100 MHz output capacitance C ob V CB =10V,I E =0,f=1MHz 15 pF CLASSIFICATION OF h FE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER SOT-89-3L Plastic-Encapsulate Transistors J T stg Storage Temperature -55~150 RΘJA Thermal Resistance From Junction To Ambient 250 www.cj-elec.com 1 A,Jun,2014www.cj-elec.com E,Aug,2016 ℃/W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 1 10 100 1000 100 1000 1 10 100 1000 100 1000 0.1 1 10 100 0123 4567 0.00 0.05 0.10 0.15 0.20 0.25 0.30 10 100 100 1000 COMMON EMITTER V CE = 1V V BE I C BESE-EMMITER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) T a =25 T a =100 β=10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (W) T a =100 T a =25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) 1500 1500 1500 300 I C h FE T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 1V 1500 f=1MHz I E =0/I C T a =25 V CB EB C ob ib C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COMMON EMITTER T a =25 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER V CE =10V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) I C f T Typical Characteristics www.cj-elec.com 2www.cj-elec.com A,Jun,2014E,Aug,2016

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3www.cj-elec.com A,Jun,2014E,Aug,2016

www.cj-elec.com 4www.cj-elec.com A,Jun,2014E,Aug,2016