PXT8050 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toPXT 8550 Collector current: IC =1.5A MARKING :Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 40 V Collector-EmitterV oltage V CEO 25 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 1500 Collector Pow er Dissipation PC 1000 Junction Temperature TJ 150 StorageTemp erature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Symbol Test conditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC = 100μA, IE=0 40 V Collector-emitter breakdow n voltage V CEO IC = 0.1mA, IB =0 25 V Emitter base breakd o w n v o l t age V EBO I E 100 μA, I C V Collector cut-off current ICBO V CB = 40 V , IE=0 0.1 μA Collector cut-off current ICEO V CE = 20 V , IB =0 0.1 μA Emittercut-offcurrent IEBO V EB = 5V , IC =0 0.1 μA DC currentgain h FE(1) V CE = 1V , IC = 100mA 85 400 h FE(2) V CE = 1V , IC = 800mA 50 Collector-emitter saturationvoltage V CE (sat) IC =800mA, IB =80mA 0.5 V Base-emittersaturationvoltage V BE (sat) IC =800mA, IB =80mA 1.2 V Base emitter v ol t age V BE V CE V I C =10mA V Base emitter posit i v e f a v or v o l t age V BE F I B A 1.5 V Transition frequency fT V CE =10V ,IC =50mA,f=30MHz 100 MHz output capacitance C ob VCB=10V,IE=0,f=1MHz 15 pF CLASSIFICA TION OF HFE Rank B C D D1 Range 85-160 120-200 160-300 300-400 1. BASE 2.COLLECTO SOT -89 3.EMITTER (NPN) m A m W PXT8050
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics PXT8050