PXT3906 HTSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
TRANSISTOR(PNP)
FEATURES
z Compliment to PXT3904 z Low current z Low voltage MARKING: MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Paramete r Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -0.2 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T st g Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-10μA,I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA,I C =0 -6 V Collector cut-off current I CBO V CB =-30V,I E =0 -0.05 μA cut-off current I EBO V EB =-6V,I C =0 -0.05 μA h FE(1) V CE =-1V,I C =-0.1mA 60 h FE(2) V CE =-1V,I C =-1mA 80 h FE(3) V CE =-1V,I C =-10mA 100 300 h FE(4) V CE =-1V,I C =-50mA 60 DC current gain h FE(5) V CE =-1V,I C =-100mA 30 V CE(sat)1 I C =-10mA,I B =-1mA -0.25 V Collector-emitter saturation voltage V CE(sat)2 I C =-50mA,I B =-5mA -0.4 V V BE(sat)1 I C =-10mA,I B Base-emitter saturation voltage V BE(sat)2 I C =-50mA,I B =-5mA -0.95 V Transition frequency f T V CE =-20V,I C =-10mA,f=100MHz 250 MHz Collector capacitance C c V CB =-5V,I E =0,f=1MHz 4.5 pF Emitter capacitance Ce V EB =-0.5V,I C =0,f=1MHz 10 pF Noise figure NF V CE =-5V,I c =-0.1mA,f=10Hz-15.7kHz, R S =1KΩ 4 dB Delay time t d 35 nS Rise time t r 35 nS Storage time t S 225 nS Fall time t f I C =-10mA , I =-I = -1mA 75 nS SOT-89 1. BASE 2. COLLECTOR 3. EMITTER PXT3906 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu