PXT3906 JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors PXT3906 TRANSISTOR (PNP)

FEATURES

MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit Collector-base breakdow n voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdow n voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdow n voltage V(BR)EBO IE=-10μA,IC=0 -6 V Collector cut-off current ICBO V CB=-30V,IE=0 -0.05 μA (PLWWHUcut-off current ,EBO V EB=-6V,IC=0 -0.05 μA hFE(1) V CE=-1V,IC=-0.1mA 60 hFE(2) V CE=-1V,IC=-1mA 80 hFE(3) V CE=-1V,IC=-10mA 100 300 hFE(4) V CE=-1V,IC=-50mA 60 DC current gain hFE(5) V CE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V Collector-emitter saturation v oltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V Base-emitter saturation v oltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequenc y fT V CE=-20V,IC=-10mA,f=100MHz 250 MHz Collector capacitance Cc V CB=-5V,IE=0,f=1MHz 4.5 pF Emitter capacitance Ce V EB=-0.5V,IC=0,f=1MHz 10 pF Noise figure NF VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ 4 dB Delay time td 35 nS Rise time tr 35 nS Storage time tS 225 nS Fall time tf IC=-10mA , IB1=-IB2= -1mA 75 nS SOT-89-3L 1. BASE 2. COLLECTO R 3. EMITTER &ROOHFWRUFXWRIIFXUUHQW ICEX V CB=-30V,VBE(off)=-3V -0. 05 μA www.cj-elec.com 1 B,Jun,2015 Tstg Storage Temperature -55-150 ℃ RθJA Thermal resist ance from junction to ambient 250 ℃/W

-0.1 -1 -10 -1 100 200 300 -10 -100 -10 100 -0.1 -1 -10 -1 -10 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 -0.2 -0 .4 -0.1 -10 -100 -1 -10 -10 -0.0 -0.4 -0.8 -1.2 -0.0 -0.5 -1.0 -1 .5 -2.0 -2.5 -12 -15 -18 -200 fT —— I C hFE — — COMMON EM ITTER VCE=-1V -3 -30-0.3 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC -30 -300 -30 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCEsat —— -600 -200 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V ( f=1MHz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— CAPACITANCE C (pF 300 100 -3 -30 -80 VCE=-20V Ta=25℃ TRANSITION FRE QUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TE MPERATURE Ta ( )℃ Pc — — Ta -200 VBEIC —— -30 -0.3 Ta=25℃ Ta=100℃ COMMON EM ITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMI TER VOLTAGE VBE (V) -30-3 β=10 BASE-EMITTE R SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ -200 ICVBEsat —— Stat ic Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -80uA -72uA -64uA -56uA -48uA -40uA -32uA -24uA -16uA IB=-8uA COMMON E MITTER Ta=25℃ www.cj-elec.com 2 B,Jun,2015 Typical Characteristics

A 1.400 1.600 0. 055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Lay out www.cj-elec.com 3 B,Jun,2015

www.cj-elec.com 4 B,Jun,2015