PXT3904 HTSEMI | Alldatasheet
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TRANSISTOR(NPN)
FEATURES
z Compliment to PXT3906 z Low current z Low voltage MARKING: 1A MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Paramete r Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T st g Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =30V,I E =0 0.05 μA cut-off current I EBO V EB =6V,I C =0 0.05 μA h FE(1) V CE =1V,I C =0.1mA 60 h FE(2) V CE =1V,I C =1mA 80 h FE(3) V CE =1V,I C =10mA 100 300 h FE(4) V CE =1V,I C =50mA 60 DC current gain h FE(5) V CE =1V,I C =100mA 30 V CE(sat)1 I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat)2 I C =50mA,I B =5mA 0.3 V V BE(sat)1 I C =10mA,I B =1mA 0.65 0.85 V Base-emitter saturation voltage V BE(sat)2 I C =50mA,I B =5mA 0.95 V Transition frequency f T V CE =20V,I C =10mA,f=100MHz 300 MHz Collector capacitance C c V CB =5V,I E =0,f=1MHz 4 pF Emitter capacitance C e V EB =0.5V,I C =0,f=1MHz 8 pF Noise figure NF V CE =5V,I c =0.1mA,f=10Hz-15.7kHz, R S =1KΩ 5 dB Delay time t d 35 nS Rise time t r 35 nS Storage time t S 200 nS Fall time t f I C =10mA , I =-I = 1mA 50 nS SOT-89 1. BASE 2. COLLECTOR 3. EMITTER PXT3904 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu