PXT2907A HTSEMI | Alldatasheet
Document overview
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Technical content
- BASE 2. COLLECTOR 3. EMITTER TRANSISTOR(PNP)
FEATURES
z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-1mA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-1mA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E =0 -0.01 µA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.01 µA V CE =-10V, I C =-0.1mA 75 V CE =-10V, I C =-1mA 100 V CE =-10V, I C =-10mA 100 V CE =-10V, I C =-150mA 100 300 DC current gain h FE V CE =-10V, I C =-500mA 50 I C =-500mA,I B =-50mA -1.6 V Collector-emitter saturation voltage V CE(sat) I C =-150mA,I B =-15mA -0.4 V I C =-500mA,I B =-50mA -2.6 V Base-emitter saturation voltage V BE(sat) I C =-150mA,I B =-15mA -1.3 V Delay time t d 12 ns Rise time t r 30 ns Storage time t s 300 ns Fall time t f V CC =-30V, I C =-150mA, I =- I =-15mA 65 ns Transition frequency f T V CE =-10V,I C =-20mA, f=100MHz 200 MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ PXT2907A Date:2011/05 www.htsemi.comsemiconductor JinYu