PXT2907A JIANGSU | Alldatasheet

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  1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2907A TRANSISTOR (PNP)

FEATURES

z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-1mA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-1mA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E =0 -0.01 µA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.01 µA V CE =-10V, I C =-0.1mA 75 V CE =-10V, I C =-1mA 100 V CE =-10V, I C =-10mA 100 V CE =-10V, I C =-150mA 100 300 DC current gain h FE V CE =-10V, I C =-500mA 50 I C =-500mA,I B =-50mA -1.6 V Collector-emitter saturation voltage V CE(sat) I C =-150mA,I B =-15mA -0.4 V I C =-500mA,I B =-50mA -2.6 V Base-emitter saturation voltage V BE(sat) I C =-150mA,I B =-15mA -1.3 V Delay time t d 12 ns Rise time t r 30 ns Storage time t s 300 ns Fall time t f V CC =-30V, I C =-150mA, I =- I =-15mA 65 ns Transition frequency f T V CE =-10V,I C =-20mA, f=100MHz 200 MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Nov,2015

-200 -400 -600 -800 -1000 -100 -200 -300 -400 -500 -600 -0.1 -1 -10 100 100 200 300 400 500 -10 -100 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 -200 -400 -600 -800 -50 -100 -150 -200 -250 -300 -350 -400 V CE =-10V T a =25 T a =100 o C BASE-EMITTER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) I C —— V BE -20 f=1MHz I E =0 / I C T a =25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =-10V T a =25 o C I C f T -600-600 V CE = -10V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE -600 COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) P c —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=10 I C V BEsat T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 -2mA -1.8mA -1.6mA -1.4mA -1.2mA -1mA -0.8mA -0.6mA -0.4mA I B =-0.2mA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic Typical Characteristics www.cj-elec.com 2 D,Nov,2015

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3 D,Nov,2015

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