PXT2907A HOTTECH | Alldatasheet

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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Epitaxial planar die construction. Complementary NPN type availablePXT2222A. Ideal for medium power amplification and switching. MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Co llector-Base V oltage V CBO -60 V Collector-EmitterV oltage V CEO -60 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -600 m A Collector Pow er Dissipation PC 500 m W StorageTemp erature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Testconditions M in M ax U nit Collector-base breakdow n voltage V CBO IC =-10μA IE=0 -60 V Collector-em itter breakdown voltage V CEO IC =-10mA IB =0 -60 V Emitter-base breakdow n voltage V EBO IE=-10μA IC =0 -5 μV Collectorcut-offcurrent ICBO V C B =-50V IE=0 -10 nA Emittercut-offcurrent IEBO V EB =-5V,IC =0 -50 nA DC currentgain hFE V C E=-1V IC =-100mA V C E=-1V IC =-1mA V C E=-1V IC =-10mA V C E=-2V IC =-150mA V C E=-10V IC =-500mA 100 100 100 -300 Collector-em itter saturationvoltage V CE(sat) IC =-150mA IB =-15mA IC =-500mA IB =-50mA -0.4 -1.6 V Base-emittersaturationvoltage V BE(sat) IC =-150mA IB =-15mA IC =-500mA IB =-50mA -1.3 -2.6 V Transitionfrequency fT V C E=-10V, I C 20mA, f=100MHz

200 MHz

Output Capacitance C obo V C B =-10V f=1.0MHz IE=0 - 8.0 pF InputCapacitance C ibo V EB =-10V f=1.0MHz IC =0 - 30 pF Delay time td V C E=-30V ,IC =-150mA, IB1 =-15mA 10 ns Rise time tr 40 ns Storage time t s V C E=-6V ,IC =-150mA IB1 =-IB2 =-15mA ns Falltime tf 30 ns 1. BASE 2.COLLECTO SOT -89 3.EMITTER PXT 2907A (PN P)

Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics PXT 2907A