PXT2222A HTSEMI | Alldatasheet
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Technical content
FEATURES
z Epitaxial planar die construction z Complementary PNP Type available(PXT2907A) MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 600 mA P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V (BR)CBO I C = 10μ A,I E =0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB =60V, I E =0 0. 01 μA Emitter cut-off current I EBO V EB = 5V , I C =0 0. 01 μA h FE(1) V CE =10V, I C = 0.1mA 35 h FE(2) V CE =10V, I C = 1mA 50 h FE(3) V CE =10V, I C = 10mA 75 h FE(4) V CE =10V, I C = 150mA 100 300 h FE(5) V CE =1V, I C = 150mA 50 DC current gain h FE(6) V CE =10V, I C = 500mA 40 V CE(sat) I C =500mA, I B = 50mA 1 V Collector-emitter saturation voltage V CE(sat) I C =150mA, I B =15mA 0.3 V V BE(sat) I C =500mA, I B =50mA 2.0 V Base-emitter saturation voltage V BE(sat) I C =150mA, I B =15mA 0.6 1.2 V Transition frequency f T V CE =10V, I C =20mA f=100MHz 300 MHz Output Capacitance C ob V CB =10V, I E = 0,f=1MHz 8 pF Delay time t d 10 nS Rise time t r V CC =30V, I C =150mA V BE(off) =0.5V,I =15mA 25 nS Storage time t S 225 nS Fall time t f V CC =30V, I C =150mA I =- I = 15mA 60 nS SOT-89 BASE COLLECTOR EMITTER PXT2222A TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu