PXT2222A JIANGSU | Alldatasheet

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ANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN)

FEATURES

z Epitaxial planar die construction z Complementary PNP Type available(PXT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) S ymbol Parameter Value Unit VCBO Collector-Ba se Voltage 75 V VCEO Collector-Emitter V oltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Cur rent -Continuous 600 mA PC Collector Power Dissip ation 0.5 W TJ Junction T emperature 150 ℃ Tstg S torage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max Unit Co llector-base breakdown voltage V(BR)CBO I C= 1 0μ A,IE= 0 75 V Co llector-emitter breakdown voltage V(BR)CEO I C= 10mA, IB= 0 40 V Emitter-b ase breakdown voltage V(BR)EBO I E=1 0μA, IC=0 6 V Co llector cut-off current ICBO V CB= 60V, I E=0 0. 01 μA Emitter cut-off current IEBO V EB= 5 V , IC= 0 0. 01 μA hFE(1) V CE= 10V, IC= 0.1mA 35 hFE(2) V CE= 10V, IC= 1mA 50 hFE(3) V CE= 10V, IC= 10mA 75 hFE(4) V CE= 10V, IC= 150mA 100 300 hFE(5) V CE=1 V, IC= 150mA 50 DC cu rrent gain hFE(6) V CE= 10V, IC= 500mA 40 VCE(sat) I C= 500mA, IB= 50mA 1 V Co llector-emitter saturation voltage VCE(sat) I C= 150mA, IB=15mA 0.3 V VBE(sat) I C= 500mA, IB=50mA 2.0 V Bas e-emitter saturation voltage VBE(sat) I C= 150mA, IB=15mA 0.6 1.2 V T ransition frequency fT VCE= 10V, IC= 20mA f=100MHz 300 MHz Ou tput Capacitance Cob VCB= 10V, IE= 0 ,f=1MHz 8 pF Dela y time td 10 ns Rise time tr VCC= 30V, IC= 150mA VBE(off)=0 .5V,IB1= 15mA 25 n s S torage time tS 225 ns Fall time tf VCC= 30V, IC= 150mA IB1=- IB2= 15mA 60 ns SOT -89-3L BASE COL LECTOR EMITTER MARKING: 1P A,May,201 www.cj-elec.com 1 A,Jun,2014www.cj-elec.com E,Mar,2016

0.1 100 11 0 100 300 600 900 1200 0 25 50 75 100 125 150 100 200 300 400 500 600 1 10 100 100 1000 11 0 100 100 1000 0.1 1 10 100 02468 1 0 1 2 1 4 1 6 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 100 COMMON EMITTER V CE = 10V V BE I C — — BESE-EMMITER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) T a =25 T a 600 β=10 I C V BEsat — — BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 600 P C — — T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) T a =100 T a =25 β=10 I C V CEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) 600 I C h FE — — T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 10V 600 f=1MHz I E =0/I C T a =25 V CB EB C ob ib — — C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COMMON EMITTER T a =25 1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA I B = 100uA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER V CE =10V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 500 I C f T — — Typical Characteristics A,May,2011 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com E,Mar,2016

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout A,May,2011 www.cj-elec.com 3 A,Jun,2014www.cj-elec.com E,Mar,2016

A,May,2011 www.cj-elec.com 4 A,Jun,2014www.cj-elec.com E,Mar,2016