PXT2222A HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Epitaxial planar die construction. Complementary NPN type availablePXT 2907A. Ideal for medium power amplification and switching. MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Co llector-Base V oltage V CBO 75 V Collector-EmitterV oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current-Continuous IC 600 m A Collector Pow er Dissipation PC 500 m W StorageTemp erature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sym bol Test conditions M in M ax U nit Collector-base breakdow n voltage V CBO IC = 10μ A,IE=0 75 V Collector-emitter breakdow n voltage V CEO IC = 10mA, IB =0 40 V Emitter-base breakdow n voltage V EBO IE=10μA, IC =0 6 V Collector cut-off current ICBO V CB =60V ,IE=0 0. 01 μA Emittercut-offcurrent IEBO V EB = 5V , IC =0 0. 01 μA DC current gain hFE(1) V CE =10V ,IC = 0.1mA 35 hFE(2) V CE =10V ,IC = 1mA 50 hFE(3) V CE =10V ,IC = 10mA 75 hFE(4) V CE =10V ,IC = 150mA 100 300 hFE(5) V CE =1V ,IC = 150mA 50 hFE(6) V CE =10V ,IC = 500mA 40 Collector-emitter saturationvoltage V CE(sat) IC =500mA, IB = 50mA 1 V V CE(sat) IC =150mA, IB =15mA 0.3 V Base-emitter saturation voltage V BE(sat) IC =500mA, IB =50mA 2.0 V V BE(sat) IC =150mA, IB =5mA 0.6 1.2 V Transition frequency fT V CE =10V, IC =20mA f=100MHz 300 MHz O utputCapacitance C ob V CB =10V , IE= 0,f=1MHz 8 pF Delay time td V CC =30V, IC =150mA V BE(off)=0.5V,IB1 =15mA 10 nS Rise time tr 25 nS Storage time tS V CC =30V, IC =150mA IB1 =-IB 2= 15mA 225 nS Falltime tf 60 nS 1. BASE 2.COLLECTO SOT -89 3.EMITTER PXT 2222A (N PN )
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. PXT 2222A Typical Characteristics