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Data Sheet 1 of 11 Rev. 04, 2010-04-16 All published data at T CASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PTMA080302M Confidential, Limited Internal Distribution Broadband Performance VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, fixture tuned for 920 - 960 MHz 700 750 800 850 900 950 1000 1050 1100 Frequency (MHz) Gain (dB) -25 -20 -15 -10 Return Loss (dB) Gain Return Loss

Description

The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats from 700 to 1000 MHz. This device is offered in a 20-lead, thermally-enhanced, overmolded package for cool and reliable operation. PTMA080302M Package PG-DSO-20-63 Wideband RF LDMOS Integrated Power Amplifier

30 W, 700 – 1000 MHz Features

 Designed for wide RF modulation bandwidths, and low memory effects  On-chip matching, integrated input DC block, 50-ohm input and ~ 8-ohm output  Typical GSM/EDGE performance, 940 MHz, 28 V - Output power = 15 W Avg. - Linear gain = 31 dB - Power added efficiency = 36% - EVM at 15 W = 1.7 % - ACPR at 400 kHz = –61 dBc - ACPR at 600 kHz = –73 dBc  Typical CW performance at 940 MHz, 28 V - Output power at P–1dB = 32 W - Linear gain (1 W) = 31 dB - Power added efficiency = 46%  Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power  Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F  RoHS-compliant package *See Infineon distributor for future availability. RF Characteristics GSM/EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 920 to 960 MHz, POUT = 15 W Avg. Characteristic Symbol Min Typ Max Unit Gain G ps —3 1 — d B Power-added Efficiency PAE — 36 — % Error Vector Magnitude EVM (RMS) — 1.7 — %

Data Sheet 2 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution RF Characteristics (cont.) GSM/EDGE Measurements (cont.) VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 920 to 960 MHz, POUT = 15 W Avg. Characteristic Symbol Min Typ Max Unit Modulation Spectrum 400 kHz offset ACPR1 — –61 — dBc 600 kHz offset ACPR2 — –73 — dBc Input Return Loss IRL — –15 — dB Gain Flatness ΔG — 0.2 — dB Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, POUT = 32 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain G ps 31 32 — dB Power-added Efficiency PAE 34 35 — % Intermodulation Distortion IMD — –33 –31 dBc Single-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 940 MHz Characteristic Symbol Min Typ Max Unit Gain G ps —3 2 — d B Power-added Efficiency PAE — 46 — % Output Power P–1dB — 31 — W DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1.0 µA VDS = 63 V, VGS = 0 V I DSS — — 10.0 µA On-State Resistance Stage 1 V GS = 10 V, VDS = 0.1 V R DS(on) — 0.25 — Ω Stage 2 V GS = 10 V, VDS = 0.1 V R DS(on) — 1.85 — Ω Operating Gate Voltage V DS = 28 V, V GS 2.0 2.5 3.0 V IDQ1 = 120 mA, IDQ2 = 280 mA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1.0 µA

Data Sheet 3 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –0.5 to +12 V Junction Temperature T J 200 °C Input Power P IN 16 dBm Total Device Dissipation P D 129.5 W Above 25°C derate by 0.74 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) Stage 1 R θJC 6.7 °C/W Stage 2 R θJC 1.7 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Package Outline Package Description Shipping PTMA080302M V1 PG-DSO-20-63 Copper heat slug, plastic EMC body Tape *See Infineon distributor for future availability.

Data Sheet 4 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Power Sweep at Selected Drain Voltages VDD1=28 V, VDD2 = 24 V, 28 V and 32 V, IDQ1 = 120 mA, ƒ = 940 MHz 29 31 33 35 37 39 41 43 45 47 Output Power (dBm) Power Gain (dB) 28 V 24 V 32 V EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, series show ƒ = 942 MHz at selected temperatures 30 32 34 36 38 40 42 44 46 Output Power (dBm) Gain (dB) 25 ° –25 °C 25 °C 90 °C Gain Typical Performance (data taken in a production test fixture) CW Power Performance VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, ƒ = 920, 940, 960 MHz 28 32 36 40 44 48 Output Power (dBm) Gain (dB) Power Added Efficiency (%) Efficiency Gain

920 MHz

940 MHz

960 MHz

VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, selected frequencies -70 -60 -50 -40 -30 -20 27 29 31 33 35 37 39 41 43 Output Power (dBm) IMD3 (dBc) Power Added Efficiency (%) Efficiency IMD3

Data Sheet 5 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, series are at selected frequencies 30 32 34 36 38 40 42 44 Output Power (dBm) Power Added Efficiency (%) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 Edge Modulation Spectrum (dBc) Efficiency 600 kHz 400 kHz

925.2 MHz

942.6 MHz

959.8 MHz

EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, series show ƒ = 942 MHz at selected temperatures 30 32 34 36 38 40 42 44 Output Power (dBm) Power Added Efficiency (%) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 Edge Modulation Spectrum (dBc) Efficiency 600 kHz 400 kHz –25 °C 25 °C 90 °C Typical Performance (cont.) EDGE EVM VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, series show ƒ = 942 MHz at selected temperatures 30 32 34 36 38 40 42 44 Output Power (dBm) Power Added Efficiency (%) Error Vector Magnitude(%) Efficiency EVM –25 °C 25 °C 90 °C EDGE EVM VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA, series are at selected frequencies 30 32 34 36 38 40 42 44 Output Power (dBm) Power Added Efficiency (%) Error Vector Magnitude(%) Efficiency EVM

Data Sheet 6 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Broadband Circuit Impedance Z LoadD S IN 0.1 0.3 0.2 0.4 0.1 0. 1 0. 2 AVELENG THS TO W ARD G ENE <---W AVELENG THS TO W ARD LOAD - 0.0

700 MHz

1000 MHz

Z0 = 50 Ω Frequency Z Load ΩΩΩΩΩ MHz R jX 700 11.7 –4.5 720 11.0 –4.0 740 10.3 –3.6 760 9.8 –3.1 780 9.3 –2.6 800 8.9 –2.1 820 8.6 –1.6 840 8.3 –1.0 860 8.0 –0.5 880 7.8 0.0 900 7.7 0.6 920 7.6 1.1 940 7.5 1.7 960 7.4 2.3 980 7.4 2.9 1000 7.5 3.5 Gate – Source Voltage vs . Temperature VDD = 28 V, IDQ1 = 120 mA, IDQ2 = 280 mA 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -30 -10 10 30 50 70 90 Temperature (°C) Normalized Gate – Source Voltage (threshold), V Slope = –1.3 mV/°C VGS1 VGS2 Typical Performance (cont.)

Data Sheet 7 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Reference Circuit — for evaluation only Reference circuit schematic for ƒ = 940 MHz Circuit Assembly Information DUT PTMA080302M LDMOS IC PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 1960 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) C16 10μF C14 0.1μF C17 100μF 50V C25 33pF C20 10μF C21 100μF 50V C24 6.8pF 8 9 10 C15 1μF C19 1μF C18 0.1μF C22 0.6pF C23 0.6pF PTMA080302M 47pF DUT VD1 10μF 100μF 50V 0.1μF 10μF 0.1μF 47pF C11 1μF C12 0.1μF C13 47pF 1μF 1μF C10 10μF G2V G1V

Data Sheet 8 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution RF_OUT a080302m _cd_1- 30- 09 RF_IN VD2 V G1 V G2 V D1 R O4350, .030 C11 C12 C10 C17 C21 C13 C18 C19 C16 VD2 C14 C24 C15 C23 C22 C25 C20 Q2Q1 VD1 PTMA080302M_01 Reference Circuit (cont.) Reference circuit asembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C17, C21 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C2, C6, C10, Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C16, C20 C3, C7, C11, Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C15, C19 C4, C8, C12, Capacitor, 0.1 µF Digi-Key 399-1267-2-ND C14, C18 C5, C9, C13 Ceramic capacitor, 47 pF ATC 600F470JT C22, C23 Ceramic capacitor, 0.6 pF ATC 600S0R6BT C24 Ceramic capacitor, 6.8 pF ATC 600S6R8CT C25 Ceramic capacitor, 33 pF ATC 600F330JT Q1 , Q2 Transistor Infineon Technologies BCP56 R1, R2 Resistor, 0 Ω Digi-Key 603 R3, R4 Potentiometer 2k Ω Digi-Key 3224W-202ETR-ND

Data Sheet 9 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-DSO-20-63 2X 2.90 [0.114] MAX (2 PLS) 13.00 [0.512] MAX 110 11 20 INDEX PIN 1 14.20±0.30 11.00 [0.433] 9 X 1.27 = 11.43 9 X .050 = .450 1.10 [0.043] MAX (2 PLS) 2.95 [0.116] 6.00 [0.236] TOP VIEW BOTTOM VIEW [0.559±0.012] 0.40+0.13 [0.015+0.005] 0.25mm C A B 15.90±0.10 [0.626±0.004] 1.27 [0.050] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] 3.50 [0.137] MAX SEE DETAIL A SIDE VIEW END VIEW M SS 0.95±0.15 [0.037±0.006] 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0+0.1 [0+0.004] STANDOFF 1.60 [0.063] REF 0.25+0.07 –0.02 [0.010 ]+0.003 –0.001 DETAIL A PG-DSO-20-63_po_02-19-2010 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 – 15 micron [196.85 – 590.55 microinch]. Refer to Application Note “Recommendations for Printed Circuit Board Assembly of Infineon DSO and SSOP Packages” for additional information.

Data Sheet 10 of 11 Rev. 04, 2010-04-16 PTMA080302M Confidential, Limited Internal Distribution Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Pinout Diagram Thermal FET a080302m _pd_2- 2- 09 VDD 1 VDD 1 RF In VG Thermal FET VD Thermal FET RF In VG 1 VG 2 VDD 1 VDD 1 NC NC VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out NC NC Source: Plated copper heatslug on backside of package

Data Sheet 11 of 11 Rev. 04, 2010-04-16 PTMA080302M V1 Confidential, Limited Internal Distribution Revision History: 2010-04-16 Data Sheet Previous Version: 2009-08-31, Data Sheet Page Subjects (major changes since last revision)

3 Added moisture sensitivity level table

9 Updated package outline notes

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International