PTF140451E INFINEON | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Thermally-enhanced packages
  • Broadband internal matching
  • Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 12.5 W - Efficiency = 27.5% - Spectral regrowth = –30 dBc - Δ 975 kHz ƒ C
  • Typical DAB Mode 2 performance at 1500 MHz, 32 V - Average output power = 15.5 W - Efficiency = 27% - Spectral regrowth = –30 dBc - Δ 975 kHz ƒ C
  • Typical CW performance, 1500 MHz, 28 V - Output power = 60 W - Linear gain = 18 dB - Efficiency = 54% at P–1dB
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR at 28 V, 45 W (CW) output power
  • Pb-free and RoHS compliant *See Infineon distributor for future availability.

Data Sheet 2 of 9 Rev. 02, 2005-11-01 RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 45 WPEP, ƒ = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency η D 35 36.5 — % Intermodulation Distortion IMD — –32 –30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.02 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.5 3.3 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W Above 25°C derate by 1.0 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (T CASE = 70°C) Rθ JC 1.0 °C/W

Ordering Information

Type Package Outline Package Description Marking PTF140451E 30265 Thermally-enhanced slotted flange, single-ended PTF140451E PTF140451F 31265 Thermally-enhanced earless flange, single-ended PTF140451F *See Infineon distributor for future availability.

Data Sheet 3 of 9 Rev. 02, 2005-11-01 CW Power Sweep (P–1dB) VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz 0 10 20 30 40 50 60 Output Power (W) Gain (dB) Drain Efficiency (%) Drain Efficiency TCASE = 25°C TCASE = 90°C Gain CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 550 mA, POUT (CW) = 12 W 1400 1450 1500 1550 1600 Frequency (MHz) -40 -35 -30 -25 -20 -15 -10 Input Return Loss (dB)Gain Drain Efficiency Return Loss Gain (dB) and Drain Efficiency (%) . 3rd Order Intermodulation Distortion vs. Output Power for Various I DQ VDD = 28, ƒ = 1500 MHz, tone spacing = 1 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 32 34 36 38 40 42 44 46 48 Output Power, PEP (dBm) IM3 (dBc) IDQ = 450 mA IDQ = 500 mA IDQ = 650 mA IDQ = 550 mA IDQ = 600 mA 2-Tone Drive-up at Optimum Current VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz, tone spacing = 1 MHz -65 -55 -45 -35 -25 32 36 40 44 48 Output Power, PEP (dBm) IMD (dBc) Drain Efficiency (%) 3rd Order 7th 5th Drain Efficiency Typical Performance

Data Sheet 4 of 9 Rev. 02, 2005-11-01 DAB Mode 2 Drive-up at 32 V IDQ = 550 mA, ƒ = 1500 MHz -42 -38 -34 -30 -26 -22 35 36 37 38 39 40 41 42 43 Output Power, avg. (dBm) Drain Efficiency (%) Drain Efficiency Regrowth Spectral Regrowth (dBc) . Gate-Source Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current. 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 0.30 A 1.10 A 2.00 A 2.85 A 3.75 A 4.50 A Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 1400 9.1 –2.65 4.20 –3.70 1450 9.1 –1.81 4.10 –3.50 1500 9.3 –0.98 4.10 –2.90 1550 9.5 0.15 4.00 –2.70 1600 9.9 0.60 4.00 –2.20 0.1 0.3 0.2 0.1 0.1 0.2 <---W AVELE N 0.0

1600 MHz

1400 MHz1600 MHz

1400 MHz

Z0 = 50 Ω Typical Performance (cont.)

Data Sheet 5 of 9 Rev. 02, 2005-11-01 Reference Circuit Reference circuit schematic for 1500 MHz Circuit Assembly Information DUT PTF140451E or PTF140451F LDMOS Transistor PCB 0.76 mm [0.030"] thick, ε r = 4.5 TMM4 2 oz. copper, both sides Microstrip Electrical Characteristics at 1500 MHz 1 Dimensions: L x W (mm) Dimensions: L x W (in.) 1Electrical Characteristics are rounded. 14 0451e f_s ch _9- 28- 05 RF_IN RF_OUT 2K V 2K V 1.3K V LM7805 QQ1 10V 33pF 2.1pF 10V DUT .1µFC5 10µF 35V C4 R7 .01µFC6 33pF l2 l3 l4 l5 l6 1KV 1KV 33pF C17 0.9pF C18 l10 l11 1.4pF C16 33pF .02µF 1µF C10 C11 C12 1µF C13 C14 .1µF C15 22µF 50V VDD 0.001µF VDD 0.001µF BCP56 0.001µF 1.2K V l12

Data Sheet 6 of 9 Rev. 02, 2005-11-01 140451out_01140451in_01 HHD 4V6 140451ef_assy-05-09-16 VDD VDD R6 R7 C17 C18 C15 C10 C16 QQ1 C2R2 LM C14 C13 C12C11 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 366-1655-2-ND C5, C14 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6 Capacitor, 0.01 µF ATC 200B 103 C7 Capacitor, 33 pF ATC 100A 330 C8, C10, C17 Ceramic capacitor, 33 pF ATC 100B 330 C9 Ceramic capacitor, 2.1 pF ATC 100B 2R1 C11 Capacitor, 0.02 µF ATC 200B 203 C12, C13 Ceramic capacitor, 1.0 µF Digi-Key 445-1411-1-ND C15 Electrolytic capacitor, 22 µF, 50 V Digi-Key PCE3374CT-ND C16 Ceramic capacitor, 1.4 pF ATC 100B 1R4 C18 Ceramic capacitor, 0.9 pF ATC 100B 0R9 L1 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND R5, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND R6, R7 Chip resistor, 1 k-ohms Digi-Key P1KECT-ND *Gerber files for this circuit are available on request. 140451ef_dtl VDD R6 R7 QQ1 C2R2 LM

Data Sheet 7 of 9 Rev. 02, 2005-11-01 Package Outline Specifications Package 30265 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Diagram Notes: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] 20.31 [.800] 10.16±0.25 [.400±.010] 2X 2.59±0.38 [.107 ±.015] FLANGE 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] CL CL (45° X 2.03 [.080]) S D G 2X R1.60 [.063] LID 10.16±0.25 [.400±.010] 0.0381 [.0015] -A- 3.48±0.38 [.137±.015] 1.02 [.040] SPH 1.57 [.062] 15.60±0.51 [.614±.020] H-30265-2-1-2303

Data Sheet 8 of 9 Rev. 02, 2005-11-01 265-cases_31265 (45° X 2.03 [.080]) 2X 2.59±0.51 [.102±.020] S D G LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] 2X 7.11 [.280] 10.16±0.25 [.400±.010] 10.16 [.400] 1.02 [.040] 3.56±.38 [.140±.015] SPH 1.57 [.062] 0.025 [.001] -A- 10.16 [.400] 15.49±.51 [.610±.020] R1.27 [R.050] 4X R0.63 [R.025] MAX Package Outline Specifications (cont.) Package 31265 Diagram Notes: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products

Data Sheet 9 of 9 Rev. 02, 2005-11-01 PTF140451EF Confidential – Limited Distribution Revision History: 2005-11-01 Data Sheet Previous Version: 2005-09-07, Preliminary Data Sheet Page Subjects (major changes since last revision) All Add graphs and circuit information. Remove Preliminary designation. GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2005-11-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International