PTF10019 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS VGS = 0 v ID = 25 mA 65 V IDSS VDS = 26 V 1.0 mA VGS(th) VDS = 10 V ID = 75 mA 3.0 5.0 V Gfs VDS = 10 V ID = 3.0 A 3.0 Siemens PG ηηηηC P-1dB ΨΨΨΨ VDD = 28 V P OUT = 70 W IDQ = 600 mA f = 960 MHz 13.0 14.5 10:1 dB W --- MOS FIELD EFFECT TRANSISTOR PTF10019 DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. FEATURES:
- 70 W, 860-960 MHz
- Internally matched
- Omnigold™ Metalization System
- Silicon Nitride Passivated MAXIMUM RATINGS VDSS 65 V VGS ±20 V PDISS 215 W @ TC = 25 °C TJ -40 °C to +200 °C TSTG -40 °C to +150 °C θθθθJC 0.8 °C/W PACKAGE STYLE 1 = DRAIN 2 = GATE 3 = SOURCE