PTF041501E INFINEON | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Thermally-enhanced packages
  • Broadband internal matching
  • Typical CDMA performance at 470 MHz, 28 V - Average output power = 32 W - Linear Gain = 21 dB - Efficiency = 31%
  • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 165 W - Efficiency = 61%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 5:1 VSWR @ 28 V,

150 W (CW) output power

Data Sheet 2 of 11 Rev. 04, 2007-08-01 RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, f = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21 — dB Drain Efficiency η D 45 46 — % Intermodulation Distortion IMD — –30 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.9 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W Above 25°C derate by 3.57 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) Rθ JC 0.28 °C/W

Ordering Information

Type Package Outline Package Description Marking PTF041501E H-30260-2 Thermally-enhanced slotted flange, single-ended PTF041501E PTF041501F H-31260-2 Thermally-enhanced earless flange, single-ended PTF041501F

Data Sheet 3 of 11 Rev. 04, 2007-08-01 450 455 460 465 470 Frequency (MHz) Gain (dB) Efficiency (%), POUT (dBm) Output Power Efficiency Gain POUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 900 mA IM3 vs. Output Power at Selected Biases VDD = 28 V, f1 = 469, f2 = 470 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 36 38 40 42 44 46 48 50 Output Power (dBm), avg. IMD (dBc) 675 mA 1125 mA 900 mA Typical Performance (data taken in a production test fixture) Power Sweep VDD = 28 V, f = 470 MHz 39 41 43 45 47 49 51 53 55 Output Power (dBm) Power Gain (dB) IDQ = 675 mA IDQ = 1125 mA IDQ = 900 mA Broadband Circuit Performance VDD = 28 V, IDQ = 900 mA, POUT avg.. = 48.75 dBm 445 450 455 460 465 470 475 Frequency (MHz) Gain (dB), Efficiency (%) -20 -10 Return Loss (dB) Gain Return Loss Efficiency

Data Sheet 4 of 11 Rev. 04, 2007-08-01 Intermodulation Distortion vs. POUT (in a broadband circuit) VDD = 28 V, IDQ = 900 mA, f1 = 469 MHz, f2 = 470 MHz -70 -60 -50 -40 -30 -20 -10 36 38 40 42 44 46 48 50 Output Power (dBm), Avg. IMD (dBc) 3rd Order 7th 5th Three-carrier CDMA 2000 Performance VDD = 28 V, IDQ = 900 mA, f = 470 MHz 36 38 40 42 44 46 48 50 Output Power (dBm), Avg. Drain Efficiency (%) -60 -55 -50 -45 -40 -35 Adj. Ch. Power Ratio (dBc) ACP Low ACP UpALT Up Efficiency Output Power (at 1 dB Compression) vs. Supply Voltage IDQ = 900 mA, f = 470 MHz 24 26 28 30 32 Supply Voltage (V) Output Power (dBm) Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 900 mA, f = 470 MHz 39 41 43 45 47 49 51 53 55 Output Power (dBm) Gain (dB) Drain Efficiency (%) Efficiency Gain Typical Performance (cont.)

Data Sheet 5 of 11 Rev. 04, 2007-08-01 Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 450 1.07 –3.15 1.18 0.96 455 1.03 –3.04 1.21 1.03 460 1.02 –2.89 1.24 1.17 465 1.01 –2.80 1.28 1.25 470 0.99 –2.67 1.26 1.36 0.1 0.2 0.1 0.1 - W AVELENGTHS TOW ARD GEN <--- W AVELENGTHS TOW ARD LOAD - 0.0 Z Load Z Source

450 MHz

470 MHz

Z0 = 50 Ω Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 2.25 A 4.50 A 6.75 A 9.00 A 11.25 A 13.50 A Typical Performance (cont.)

Data Sheet 6 of 11 Rev. 04, 2007-08-01 Reference Circuit Reference circuit schematic for f = 460 MHz Circuit Assembly Information DUT PTF041501E or PTF041501F LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 9.2 Rogers TMM10 2 oz. copper Microstrip Electrical Characteristics at 460 MHz 1 Dimensions: L x W (mm) Dimensions: L x W (in.) 1 Electrical characteristics are rounded. RF_IN RF_OUT 041501ef_sch 2KV 2KV 0.001µF 0.001µF BCP56 1.3KV 1.2KV LM7805 0.001µF VDD QQ1 3.3KV 100pF 1µF 10µF 50V 100pF 100pF 5.1pF 5.6pF 2.1pF 100pF 1µF 10µF VDD l1 l3 DUT C10 C11 C12 C15 C16C8 C19 C23C22C21 50V 0.1µF 10µF 35V 5.1KV 120pFC6 10V 4.3pF l4 l6 50V 0.1µF 50V C13 C14 10µF 50V 0.1µF 50V C24 C25 10µF l10 11pF C17 11pF C18 C20 8.2pF l11 l12 l13 l14 l15

Data Sheet 7 of 11 Rev. 04, 2007-08-01 Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5, C13, C24 Capacitor, 0.1 µF Digi-Key P4525-ND C6 Ceramic capacitor, 120 pF ATC 100B 121 C7, C10, C19, Ceramic capacitor, 100 pF ATC 100B 101 C21 C8 Ceramic capacitor, 2.1 pF ATC 100B 2R1 C9 Ceramic capacitor, 4.3 pF ATC 100B 4R3 C11, C22 Capacitor, 1.0 µF ATC 920C105 C12, C14, C23, Capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400 C25 C15 Ceramic capacitor, 5.6 pF ATC 100B 5R6 C16 Ceramic capacitor, 5.1 pF ATC 100B 5R1 C17, C18 Ceramic capacitor, 11 pF ATC 100B 110 C20 Ceramic capacitor, 8.2 pF ATC 100B 8R2 L1, L2 Ferrite, 6 mm Ferroxcube 53/3/4.6-452 Q1 Transistor Infineon BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2 k-ohms Digi-Key P2.0KECT-ND R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND R5 Chip resistor, 3.3 k-ohms Digi-Key P3.3KECT-ND R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND

Data Sheet 8 of 11 Rev. 04, 2007-08-01 041501ef_assy VDD VDD VDD RF_IN RF_OUT LM10 35V Reference Circuit (cont.) *Gerber Files for this circuit available on request Reference circuit assembly diagram* (not to scale)

Data Sheet 9 of 11 Rev. 04, 2007-08-01 Package Outline Specifications Package H-30260-2 Diagram Notes: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 260-cases_30260 0.0381 [.0015] -A- 22.35±0.23 [.880±.009] (2X 4.83±0.50 [.190±.020]) 2X 12.70 [.500] 23.37±0.51 [.920±.020] 4X R 1.52 [.060] 2X 3.25 [.128] 1.02 [.040] 27.94 [1.100] 34.04 [1.340] D S G FLANGE 13.72 [.540] 45° X (2.03 [.080]) SPH 1.57 [.062] 2X 1.63 [.064] R 4.11±0.38 [.162±.015] [.520 ]+.004 –.006 LID 13.21+0.10 –0.15

Data Sheet 10 of 11 Rev. 04, 2007-08-01 Package Outline Specifications (cont.) Package H-31260-2 Diagram Notes: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 260-cases_31260 SPH 1.57 [.062] 1.02 [.040] 23.37±0.51 [.920±.020] 2X 12.70 [.500]45° X 2.031 [.080] D G S -A- 4.11±0.38 [.162±.015] LID 22.35±0.23 [.880±.009] FLANGE 23.11 [.910] 13.72 [.540] 2x 4.83±0.50 [.190±.020] LID 13.21 +0.10 –0.15 0.0381 [.0015] 4X R 0.51 [R.020] MAX

Data Sheet 11 of 11 Rev. 04, 2007-08-01 PTF041501E/F Confidential, Limited Internal Distribution Revision History: 2007-08-01 Data Sheet Previous Version: 2005-04-15, Data Sheet Page Subjects (major changes since last revision)

6 Corrected circuit information

all Updated company information GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-08-01 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International