PTB32005X ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 3.0 mA 40 V BVCES IC = 10 mA 40 V ICBO VCE = 24 V 30 µA IEBO VEB = 1.5 V 0.6 µA Ccb VCB = 24 V V EB = 1.5 V f = 1.0 MHz 3.8 pF Cce VCB = 24 V V EB = 1.5 V f = 1.0 MHz 0.9 pF POUT ηηηηC GP VCC = 24 V f = 3.0 GHz 4.5 8.0 W dB NPN SILICON RF POWER TRANSISTOR PTB32005X PACKAGE STYLE .250 2L FLG DESCRIPTION: The ASI PTB32005X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE:
- Diffused Emitter Ballasting Resistor
- Hermetic Flange Package
- Gold Metelization MAXIMUM RATINGS IC 750 mA VCBO 40 V PDISS 8.7 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 10.5 °C/W MINIMUM inches / mm .740 / 18.80 .128 / 3.25 .245 / 6.22 .028 / 0.71 .110 / 2.79 B C D E F G A MAXIMUM .255 / 6.48 .032 / 0.81 .117 / 2.97 .132 / 3.35 inches / mm .117 / 2.97 H .560 / 14.22 .570 / 14.48 DIM K L I J .790 / 20.07 .225 / 5.72 .003 / 0.08 .810 / 20.57 .235 / 5.97 .007 / 0.18 L G I J K H F B E C ØD A NM P .060 x 45° CHAMFER P N M .149 / 3.78 .058 / 1.47 .187 / 4.75 .068 / 1.73 .125 / 3.18