PTB20111 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A 20 100 --- PG ηηηηC VCC = 25 V P OUT = 85 W f = 900 MHz ICQ = 200 mA 8.5 9.5 dB ΨΨΨΨ VCC = 25 V P OUT = 60 W f = 900 MHz ICQ = 200 mA 10:1 --- NPN SILICON RF POWER TRANSISTOR PTB20111 DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES:
- 25 W, 860-900 MHz
- Silicon Nitride Passivated
- Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 65 V PDISS 159 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θθθθJC 1.1 °C/W PACKAGE STYLE .400 2L FLG 1 = COLLECTOR 2 = EMITTER 3 = BASE