PTB20101 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A 20 100 --- COB VCB = 28 V f = 1.0 MHz 3.5 5 pF PG ηC POUT VCC = 28 V P OUT = 110 W f = 860 MHz ICQ = 2x200 mA 8.5 175 dB W Ψ VCC = 28 V P OUT = 175 W f = 860 MHz ICQ = 2x200 mA 5:1 --- NPN SILICON RF POWER TRANSISTOR PTB20101 DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES:
- 175 W, 470-860 MHz
- Silicon Nitride Passivated
- Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 65 V PDISS 330 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θJC 0.53 °C/W PACKAGE STYLE .860 4L FLG 1,5 = COLLECTOR 3 = EMITTER 2,4 = BASE