PTB20038 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A 20 100 --- PG ηηηηC VCC = 25 V P OUT = 25 W f = 900 MHz 9.0 dB PG ηηηηC ΨΨΨΨ VCC = 25 V P OUT = 10 W f = 900 MHz ICQ 30:1 dB --- NPN SILICON RF POWER TRANSISTOR PTB20038 DESCRIPTION: The ASI PTB20038 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES:
- 25 W, 860-900 MHz
- Silicon Nitride Passivated
- Omnigold™ Metalization System MAXIMUM RATINGS IC 6.7 A VCB 50 V PDISS 65 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θθθθJC 2.7 °C/W PACKAGE STYLE .400 6L FLG 1 = COLLECTOR 2 = BASE 3,4,5,6 = EMITTER
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND. PTB23005X Specifications are subject to change without notice.