PT9732

PT9732 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 35 V BVCES IC = 50 mA 60 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 25 V 1.0 mA hFE VCE = 10 V IC = 500 mA 20 150 --- COB VCB = 28 V f = 1.0 MHz 18 pF GP ηηηη PSAT VCE = 28 V P IN = 1.0 W f = 150 MHz 12 --- dB W NPN SILICON RF POWER TRANSISTOR PT9732 DESCRIPTION: The ASI PT9732 is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. FEATURES:

• PG = 12 dB min.
• POUT = 10 W
• 28 V, 175 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 1.25 A VCES 65 V VCEO 35 V VEBO 4.0 V PDISS 20 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 8.0 °C/W PACKAGE STYLE .380 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 E C E B