PT9700 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 20 mA 24 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V 0.45 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- Cob VCB = 28 V f = 1.0 MHz 5.0 pF PG ηηηηD VCC = 28 V P OUT = 1.0 W f = 400 MHz 13 dB NPN SILICON RF POWER TRANSISTOR PT9700 DESCRIPTION: The ASI PT9700 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES:

  • Class C Operation
  • PG = 13 dB at 1.0 W/400 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V PDISS 31.8 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 20 °C/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J C B E E