PT8822 HTSEMI | Alldatasheet
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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 V Continuous Drain Current ID 7 Pulsed Drain Current IDM 25 A TA = 25oC 2 Maximum Power Dissipation TA = 75oC PD 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 62.5 oC/W Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 θ 0° 10° c 0.12 REF. b 0.30 0.50 D 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 20V Dual N-Channel Enhancement Mode MOSFET PT8822 Date:2011/05 www.htsemi.comsemiconductor JinYu
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 V Drain-Source On-State Resistance RDS(on) VGS = 1.8V, ID = 2A 36.0 50.0 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 5.5A 25.0 32.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 6.6A 19.0 24.0 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.4 1 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V ±100 nA Forward Transconductance gfs VDS = 5V, ID = 7A 17.7 S Dynamic Total Gate Charge Qg 8.19 10 Gate-Source Charge Qgs 1 Gate-Drain Charge Qgd VDS = 10V, ID = 7A VGS = 4.5V 1.93 nC Turn-On Delay Time td(on) 10.87 Turn-On Rise Time tr 6.03 Turn-Off Delay Time td(off) 28.07 Turn-Off Fall Time tf VDD = 10V, ID = 1A, V GEN = 4.5V R G = 6Ω 4.33 ns Input Capacitance Ciss 836.88 Output Capacitance Coss 126.53 Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V f = 1.0 MHz 92.78 pF Source-Drain Diode Max. Diode Forward Current IS 2.5 A Diode Forward Voltage VSD IS = 1A, VGS = 0V 1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Symbol Min. Typ. Max. Unit 20V Dual N-Channel Enhancement Mode MOSFET PT8822 Date:2011/05 www.htsemi.comsemiconductor JinYu
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6 . Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode 20V Dual N-Channel Enhancement Mode MOSFET PT8822 Date:2011/05 www.htsemi.comsemiconductor JinYu