PT8205 HTSEMI | Alldatasheet
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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ± 12 V Continuous Drain Current I D Pulsed Drain Current I DM A TA = 25 o C 1.4 Maximum Power Dissipation TA = 75 o C P D W Operating Junction and Storage Temperature Range T J , T stg -55 to 150 o C Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA 100 o C/W Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t /C0118 5 sec. Ω 30m Ω 46m Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 θ 0° 10° c 0.12 REF. b 0.30 0.50 D 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 SOT-163 20V Dual N-Channel Enhancement Mode MOSFET PT8205 Date:2011/05 www.htsemi.comsemiconductor JinYu
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250uA 20 V Drain-Source On-State Resistance R DS(on) V GS = 2.5V, I D = 3.4A 35 Drain-Source On-State Resistance R DS(on) V GS = 4.0V, I D = 4.3A 30 mΩ Gate Threshold Voltage V GS(th) V DS GS , I D = 250uA 0.5 0.8 1.5 V Zero Gate Voltage Drain Current 0 I DSS V DS = 16V, V GS = 0V 1 uA Gate Body Leakage I GSS V GS = ± 8V, V DS = 0V ±100 nA Forward Transconductance g fs V DS = 5V, I D = 4A 10 S Dynamic Total Gate Charge Q g Gate-Source Charge Q gs 2.2 Gate-Drain Charge Q gd V DS = 10V, I D = 4A V GS = 4V 2.5 nC Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f V DD = 10V, R G = 10Ω I D = 1A, V GS = 4V ns Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss V DS = 8V, V GS = 0V f = 1.0 MHz pF Source-Drain Diode Max. Diode Forward Current I S A Diode Forward Voltage V SD I S = 1.7A, V GS = 0V V Note:Pulse test: pulse width <= 300us, duty cycle<= 2% Symbol Min. UnitMax.Typ. 43.5 4.8 18.3 155 800 125 1.2 0.8 Date:2011/05 www.htsemi.comsemiconductor JinYu 20V Dual N-Channel Enhancement Mode MOSFET PT8205
Date:2011/05 www.htsemi.comsemiconductor JinYu 20V Dual N-Channel Enhancement Mode MOSFET PT8205