PT6709 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 60 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA hFE VCE = 5.0 V IC = 500 mA 5.0 --- Cob VCB = 30 V f = 1.0 MHz 30 pF Cib VEB = 0.5 V f = 1.0 MHz 96 pF POUT VCE = 28 V f = 136 MHz 20 23 W GP ηC VCE = 28 V IC = 1.19 A f = 400 MHz 4.6 6.1 dB NPN SILICON RF POWER TRANSISTOR PT6709 DESCRIPTION: The ASI PT6709 is a planar transistor designed primarily for UHF Class-C, 28 V transmitters. up to 400 MHz. FEATURES:
- PG = 4.6 dB min. at 20 W/400 MHz
- ηC = 60 % min. at 20W/400 MHz
- Omnigold™ Metalization System
- Emitter Ballasting MAXIMUM RATINGS IC 3.0 A VCBO 60 V VCEO 35 V VEBO 4.0 V PDISS 30 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.8 °C/W PACKAGE STYLE .380 2L FLG E E C B