PT4800 SHARP | Alldatasheet

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PT4800/PT4800F/PT4810/PT4810F/PT4850F PT4800/PT4800F/PT4810 PT4810F/PT4850F n Absolute Maximum Ratings (Ta = 25˚C) n Outline Dimensions *1 For 3 seconds at the position of 1.8mm from the bottom face of resin package Thin Type Phototransistor n Features n Applications PT4800F/PT4810F/PT4850F PT4800/PT4800F/PT4850F PT4810/PT4810F 4. Thin type 2. Floppy disk drives 1 2 1 1.5 0.8 2 - 0.25 0.7 PT4810/F 2.54 1.0 3.5 1.7 1.8 0.8 0.8 2 - 0.45 1. VCRs PT4800/F PT4850F 2 - 0.9 Rest of gate2 - C0.5 h Epoxy resin 3.0 1.6 PT4810F Mark(blue) PT4850F Mark(black)

1 Emitter

2 Collector

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, 1. Thin type package (Thickness : 1.5mm) 2. Visible light cut-off type : 3. Single phototransistor output : Darlington phototransistor output: ( Unit : mm) h Epoxy resin Transparent resin Transparent blue resin Visible light cut-off resin (black) Parameter Symbol Rating Unit Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector current PT4800/PT4800F/PT4850F IC 20 mAPT4810/PT4810F 50 Collector power dissipation P C 75 mW Operating temperature T opr - 25 to + 85 ˚C Storage temperature T stg - 40 to + 85 ˚C *1Soldering temperature T sol 260 ˚C :0.3MAX Burry's dimensions :0.3MAX 17.5± 0.5 0.5MIN. φ 0.8

PT4800/PT4800F/PT4810/PT4810F/PT4850F n Electro-optical Characteristics *2 Ee : Irradiance by CIE standard light source A (tungsten lamp) Parameter Symbol Conditions MIN. TYP. MAX. Unit *2Collector current PT4800 IC E e = 1mW/cm 2 V CE =5 V 0.12 0.4 1.0 mA PT4800F 0.08 0.25 0.75 mA PT4850F 0.12 - 0.56 mA PT4810 E e = 0.1mW/cm 2 0.45 - 7.0 mA PT4810F 0.27 - 6.0 mAV CE =2 V Collector dark current PT4800/PT4800F ICEO E e = 0, VCE = 20V - - 0.1 m APT4850F PT4810/PT4810F E e = 0, VCE = 10V - - 1.0 m A voltage PT4800/PT4800F V CE (sat) E e = 10mW/cm 2 - - 0.4 VPT4850F IC = 0.5mA PT4810/PT4810F E e = 1mW/cm 2 - - 1.0 VIC = 2.5mA Collector-emitter breakdown voltage BV CEO IC = 0.1mA 35 - - VE e =0 Emitter-collector breakdown voltage BV ECO IE = 0.01mA 6-- VE e =0 Peak sensitivity wavelength PT4800 λ p - 800 - nm PT4800F - 860 - nm PT4850F -- 860 - nm PT4810 - 800 - nm PT4810F - 860 - nm tr V CE = 2V, IC = 2mA - 3.0 - µ sR L = 100Ω V CE =2 V IC = 10mA R L = 100Ω - 80 400 µ s tf V CE = 2V, IC = 2mA - 3.5 - µ sR L = 100Ω V CE =2 V IC = 10mA R L = 100Ω - 70 350 µ s Half intensity angle Δθ -- ±3 5 - PT4800/PT4800F PT4850F PT4810/PT4810F PT4800/PT4800F PT4850F PT4810/PT4810F *2Collector-emitter saturation (Ta = 25˚C) -25 0 25 50 75 100 100 85 0 25 50 75 100 Collector power dissipation PC (mW ) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Collector dark current ICEO (A ) (PT4800/PT4800F/PT4850F ) Response time Rise time Fall time Fig. 2-a Collector Dark Current vs. Ambient Temperature V CE = 20V 10 -6 10 -7 10 -8 10 -9 10 -1 0

PT4800/PT4800F/PT4810/PT4810F/PT4850F Ambient temperature Ta (˚C) - 25 0 25 50 75 100 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 = 10V 10 20 30 40 70 50 60 160 100 120 140 Ambient temperature Ta (˚C) Relative collector current (% ) 150 125 100 - 25 Relative collector current (% ) 500 25 75 100 Collector current IC (mA ) 11 0 0.1 0.2 0.5 2 5 20 0.1 0.2 0.5 Collector current IC (mA ) 11 0 0.1 0.1 0.2 0.5 2 5 20 0.05 0.2 0.5 Collector current IC (mA ) 25 25 0.1 0.2 0.5 PT4810 PT4810F (PT4800/PT4800F/PT4850F ) Collector dark current ICEO (A ) Ambient temperature Ta (˚C) (PT4810/PT4810F ) (PT4810/PT4810F ) (PT4810/PT4810F ) (PT4800 ) (PT4800F/PT4850F ) Irradiance Ee (mW/cm 2) Irradiance Ee ( mW/cm 2)Irradiance Ee (mW/cm 2) Fig. 2-b Collector Dark Current vs. Ambient Temperature Fig. 3-a Relative Collector Current vs. Ambient Temperature Fig. 4-a Collector Current vs. Irradiance Fig. 3-b Relative Collector Current vs. Ambient Temperature Fig. 4-b Collector Current vs. Irradiance Fig. 4-c Collector Current vs. Irradiance V CE E e = 1mW/cm 2 V CE =5 V V CE =5 V T a = 25˚CE e = 0.1mW/cm 2 V CE =2 V V CE =5 V T a = 25˚C V CE =2 V T a = 25˚C 10-1 175

PT4800/PT4800F/PT4810/PT4810F/PT4850F Collector-emitter voltage VCE (V ) Collector current IC (mA ) 0 5 10 15 20 25 30 35 0.1 0.2 0.3 0.4 0.5 0.6 Collector-emitter voltage V CE (V ) Collector current IC (mA ) 02468 1 0 1 2 1 4 0.2 0.4 0.6 0.8 1.0 1.2 Collector current IC (mA ) 0123456 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (mA ) 0123456 0.2 0.4 0.6 0.8 1.0 1.2 Wavelength λ (nm ) Relative sensitivity (% ) 400 500 600 700 800 900 100 PT4800 PT4810 PT4800F PT4801F PT4850F 0.1 0.2 0.5 2 5 10 100 Collector-emitter voltage V CE (V ) Collector-emitter voltage VCE (V ) (PT4800 ) (PT4800F/PT4850F ) (PT4810 ) (PT4810F ) Response time tr , tf (µ s) Fig. 5-a Collector Current vs. Collector-emitter Voltage 0.1mW/cm 2 Fig. 5-b Collector Current vs. Collector-emitter Voltage Fig. 5-c Collector Current vs. Collector-emitter Voltage Fig. 6 Spectral Sensitivity Fig. 5-d Collector Current vs. Collector-emitter Voltage T a= 25˚C E e= 1.0mW/cm 2 0.75mW/cm 2 0.5mW/cm 2 0.25mW/cm 2 T a= 25˚C E e = 3mW/cm 2 2.5mW/cm 2 2.0mW/cm 2 1.5mW/cm 2 1.0mW/cm 2 0.8mW/cm 2 0.6mW/cm 2 T a = 25˚C E e = 0.2mW/cm 2 0.15mW/cm 2 0.1mW/cm 2 0.08mW/cm 2 0.06mW/cm 2 0.04mW/cm 2 0.02mW/cm 2 T a = 25˚C E e = 0.2mW/cm 2 0.15mW/cm 2 0.1mW/cm 2 0.08mW/cm 2 0.06mW/cm 2 0.04mW/cm 2 0.02mW/cm 2 T a = 25˚C 11001000 V CE =2 V IC = 2mA T a = 25˚C tf tr tr tf PT4800/PT4800F/PT4850F( Fig. 7-a Response Time vs. Load Resistance Load resistance RL (k Ω )

L (Ω ) Response time (µ s) 10 100 100 tr Output Test Circuit for Response Time VCC RL OutputInput 10% tf 90% Angular displacement θ Test Circuit for Response Time td tr Output VCC Output RL Input tf 10% ts 90% 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 0.2 0.5 2 5 10 0.1mA 0.5mA 1.0mA 1.5mA 11 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 0.2 0.5 2 5 20 0.1mA 0.5mA 1.0mA 2.0mA 1.5mA (T a = 25˚C) - 80˚ - 90˚ - 60˚ - 70˚ - 50˚ - 40˚ - 30˚ Relative sensitivity (% ) + 80˚ + 90˚ + 10˚ - 10˚- 20˚ 0˚ 100 + 70˚ + 60˚ + 50˚ + 40˚ + 20˚ + 30˚ (PT4800 )( PT4800F/ PT4850F) (PT4810/ PT4810F)( PT4800/ PT4800F/ PT4850F) (PT4810/ PT4810F) PT4800/PT4800F/PT4810/PT4810F/PT4850F Irradiance Ee ( mW/cm 2)Irradiance Ee ( mW/cm 2) Collector-emitter saturation voltage V CE (sat) Collector-emitter saturation voltage V CE (sat) (V ) Fig. 8 Sensitivity Diagram Fig. 9-a Collector-emitter Saturation Voltage vs. Irradiance Fig. 9-b Collector-emitter Saturation Voltage vs. Irradiance V CE =2 V IC = 10mA T a = 25˚C tr tf td ts T a = 25˚C IC = 0.05mA T a = 25˚C IC = 0.05mA 1000 1000 5000 Fig. 7-b Response Time vs. Load Resistance Load resistance R

0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.20.020.01 0.05 0.1 0.5 1 2 1mA 2mA 4mA 6mA 8mA 1mA 2mA 4mA 6mA 8mA Relative output (% ) 11 0 0.2 0.5 2 5 20 50 0.5 100 Relative output (% ) 0.2 0.5 0.5 1 2 5 10 20 50 100 (PT4800F ) (Emitter:GL4800 ) PT4800/PT4800F/PT4810/PT4810F/PT4850F (PT4810 ) vs. Irradiance (PT4810F ) (PT4810F ) ( Irradiance Ee (mW/cm 2)Irradiance Ee (mW/cm 2 ) Collector-emitter saturation voltage V CE (sat) (V ) Collector-emitter saturation voltage V CE (sat) (V ) Emitter: GL4800 ) Fig. 9-c Collector-emitter Saturation Voltage vs. Irradiance Fig.10-b Relative Output vs. DistanceFig.10-a Relative Output vs. Distance Distance between emitter and detector d (mm ) Distance between emitter and detector d (mm ) T a= 25˚C IC = 0.5mA T a = 25˚C IC = 0.5mA l Please refer to the chapter “ Precautions for Use” Fig.9-d Collector-emitter Saturation Voltage