PT481 SHARP | Alldatasheet

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Technical content

n Absolute Maximum Ratings (Ta = 25˚C) 1. Epoxy resin package 3. High sensitivity PT481/PT483F1 PT481F PT481F/PT483F1 1. VCRs, cassette tape recorders 2. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes bottom face of resin package PT481/PT481F/PT483F1 h Epoxy resin PT481 Light blue transparent resin PT481F Visible light cut-off resin (black) 1.4 R0.5 0.15 0.75 1.15 4.0 Rest of gate 1.7 2 -0.45 2 -0.82 - 0.4 2 - C0.5 3.0 1.5 Detector center 2.54 2.8 1.6 60˚ Epoxy Mark (black) PT481F PT481/PT481F PT483F1 1.4 R0.5 0.15 0.75 1.15 4.0 Rest of gate 1.7 2 -0.45 2 -0.82 - 0.4 2 -C0.5 3.0 1.5 Detector center 2.54 2.8 1.6 60˚ Epoxy Mark (black) 2 -0.6 40.0 3.0 18.5 *1 For 3 seconds at the position of 1.4mm from the

1 Emitter

2 Collector

  1. Narrow acceptance (Δθ : Typ. ± 13˚) (IC : MIN. 1.5mA at Ee = 0.1mW/cm 2 ) : (IC : MIN. 0.9mA at Ee = 0.1mW/cm 2 ) : 4. Visible light cut-off type : h Visible light cut-off resin (black) data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, ( Unit : mm) Parameter Symbol Rating Unit Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector current I C 50 mA Collector power dissipation P C 75 mW Operating temperature T opr - 25 to +85 ˚C Storage temperature T stg - 40 to +85 ˚C *1Soldering temperature T sol 260 ˚C Narrow Acceptance High Sensitivity Phototransistor 5. Long lead pin type :PT483F1 0.8MAX. 0.5MIN. 0.3MAX. resinh 0.8MAX. 2.95±0.2 2.15± 0.2 R0.8± 0.1 17.5+1.5 -1.0 resinh 0.8MAX. 2.95± 0.2 2.15± 0.2 R0.8±0.1 0.8MAX. 0.3MAX. 0.5MIN.

n Electro-optical Characteristics Parameter Symbol Conditions MIN. TYP. MAX. Unit current PT481 IC V CE =2 V E e = 0.1mW/cm 2 1.5 10 25 mA PT481F 0.9 - 27 mA PT483F1 1.5 - 4.0 mA Collector dark current I CEO V CE = 10V, Ee =0 - - 1 0 -6 A *2 Collector-emitter saturation voltage V CE (sat) - 0.7 1.0 VE e = 1mW/cm 2 λ p - 800 - nm -- 860 - nm tr V CE = 2V, IC = 10mA - 80 - µ s tf R L = 100Ω -7 0 - µ s Ic = 2.5mA *2 Collector (Ta = 25˚C) *2 Ee : Irradiance by CIE standard light source A (tungsten lamp) Peak emission PT481 wavelength PT481F/PT483F1 Response time Rise time Fall time - 25 250 50 100 75 85 -25 0 25 50 75 100 -1 1 -1 0 10 -8 10 -7 10 -6 10 -5 10 -4 V CE = 10V Ambient temperature Ta (˚C) Relative collector current (% ) -25 0 25 50 75 100 100 125 150 175 25 25 Collector power dissipation PC (mW ) Ambient temperature Ta (˚C) Collector dark current ICEO (A ) Ambient temperature Ta (˚C) 10 -9 Irradiance Ee ( mW/cm 2) Collector current IC (mA ) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Collector Dark Current vs. Ambient Temperature Fig. 3 Relative Collector Current vs. Ambient Temperature (PT481 ) V CE =2 V T a = 25˚CV CE =2 V E e = 0.1mW/cm 2 Fig.4-a Collector Current vs. Irradiance

Irradiance Ee (mW/cm 2) Collector current IC (mA ) 10-1 25 25 Collector- emitter voltage VCE (V ) Collector current IC (mA ) 0123456 T a = 25˚C E e = 0.2mW/cm 2 P C (MAX. ) 0.15mW/cm 0.1mW/ cm 2 0.08mW/ cm 2 0.06mW/ cm 2 0.04mW/ cm 2 0.02mW/ cm 2 Collector-emitter voltage VCE (V ) Collector current IC (mA ) 02468 1 0 1 2 1 4 1 6 T a = 25˚C P C (MAX. ) E e= 0.2mW/cm 0.15mW/cm 0.1mW/cm 0.08mW/cm 0.04mW/cm Wavelength λ (nm ) Relative sensitivity (% ) 400 500 600 700 800 900 1000 1100 100 T a = 25˚C PT481 PT481F PT483F1 L (Ω ) Response time (µ s) 10 100 1000 100 5000 1000 ts td tf tr Test Circuit for Response Time td tr Output VCC Output RL Input tf 10%ts 90% V CE =2 V T a = 25˚C (PT481F/PT483F1 ) V CE =2 V IC = 10mA T a = 25˚C (PT481F/PT483F1 ) Collector-emitter Voltage (PT481 ) Fig.4-b Collector Current vs. Irradiance Fig.5-a Collector Current vs. Fig. 6 Spectral SensitivityFig.5-b Collector Current vs. Collector-emitter Voltage 0.02mW/cm 0.06mW/cm Fig. 7 Response Time vs. Load Resistance Load resistance R

Angular displacement θ Irradiance Ee (mW/cm 2 ) 0.01 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 80˚ - 90˚ - 60˚ - 70˚ - 50˚ - 40˚ - 30˚ Relative sensitivity (% ) + 80˚ + 90˚ + 10˚ - 10˚- 20˚ 0˚ 100 + 70˚ + 60˚ + 50˚ + 40˚ + 20˚ + 30˚ IC = 0.5mA 1mA 2mA 5mA 7mA 20mA 10mA Irradiance Ee (mW/ cm 2) 0.01 0.1 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC = 0.5mA 1mA 2mA 5mA 10mA 20mA Relative output (% ) 11 0 0.2 0.5 2 5 20 50 0.5 100 (Ta = 25˚C) (T a = 25˚C) Collector-emitter saturation voltage VCE (sat) (V ) (PT481F/PT483F1 ) (Ta = 25˚C) Collector-emitter saturation voltage VCE (sat) (V ) PT481 ) (PT481F/PT483F1 ) (Emitter: GL480 ) d (mm ) l Please refer to the chapter “ Precautions for Use.” Fig. 8 Sensitivity Diagram Fig.9-a Collector-emitter Saturation Voltage vs. Irradiance ( Fig.10 Relative Output vs. DistanceFig.9-b Collector-emitter Saturation Voltage vs. Irradiance Distance between emitter and detector