PT4435 HTSEMI | Alldatasheet

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Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Millimeter Millimeter A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0° 8° J 0.375 REF. E 0.40 0.90 K 45° F 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID -10.5 Pulsed Drain Current IDM -50 A TA = 25oC 2.5 Maximum Power Dissipation TA = 75oC PD 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 50 oC/W D D D D S S S G 8 7 6 5 1 2 3 4 30V P-Channel Enhancement Mode MOSFET PT4435 Date:2011/05 www.htsemi.comsemiconductor JinYu

ELECTRICAL CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -30 V Drain-Source On-State Resistance RDS(on) VGS = -10V, ID = -10.5A 15.0 18.0 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -6.0A 20.0 30.0 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.4 -3 V Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA Gate Body Leakage IGSS VGS = ± 20V, VDS = 0V ± 100 nA Forward Transconductance gfs VDS = -10V, ID = -5A 21 S Dynamic Total Gate Charge Qg 37.2 Gate-Source Charge Qgs 9.84 Gate-Drain Charge Qgd VDS = -15V, ID = -9.1A VGS = 10V 7.52 nC Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDD = -15V, RL=15Ω ID = -1A, VGEN = -10V R G = 6Ω ns Input Capacitance Ciss 1740 Output Capacitance Coss 225 Reverse Transfer Capacitance Crss VDS = 8V, VGS = 0V f = 1.0 MHz 225 pF Source-Drain Diode Max. Diode Forward Current IS A Diode Forward Voltage VSD IS = -2.1A, VGS = 0V 0.78 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Unit Max.Min. Typ.Symbol 30V P-Channel Enhancement Mode MOSFET PT4435 Date:2011/05 www.htsemi.comsemiconductor JinYu

30V P-Channel Enhancement Mode MOSFET PT4435 Date:2011/05 www.htsemi.comsemiconductor JinYu