PT4410 HTSEMI | Alldatasheet
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Technical content
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions Millimeter Millimeter A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0° 8° J 0.375 REF. E 0.40 0.90 K 45° F 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 12 Pulsed Drain Current IDM 48 A TA = 25oC 2.5 Maximum Power Dissipation TA = 75oC PD 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC Avalanche Energy with Single Pulse EAS 150 mJ Junction-to-Case Thermal Resistance RθJC 25 Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 50 oC/W D D D D S S S G 8 7 6 5 1 2 3 4 30V N-Channel Enhancement Mode MOSFET PT4410 Date:2011/05 www.htsemi.comsemiconductor JinYu
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 30 V Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 12A 11.0 15.0 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 12A 8.5 10.5 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 1 1.8 3 V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ± 20V, VDS = 0V ±100 nA Forward Transconductance gfs VDS = 15V, ID = 12A 64 S Dynamic Total Gate Charge Qg 12 45 Gate-Source Charge Qgs 4.5 Gate-Drain Charge Qgd VDS = 15V, ID = 12A VGS = 5V 3.6 nC Turn-On Delay Time td(on) 22 35 Turn-On Rise Time tr 13 20 Turn-Off Delay Time td(off) 82 125 Turn-Off Fall Time tf VDD = 15V, RG = 6Ω ID = 1A, VGS = 10V 30 45 ns Input Capacitance Ciss 1180 Output Capacitance Coss 270 Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V f = 1.0 MHz 145 pF Source-Drain Diode Max. Diode Forward Current IS 2.0 A Diode Forward Voltage VSD IS = 2A, VGS = 0V 1.5 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Test Condition Unit Max.Min. Typ.Symbol 30V N-Channel Enhancement Mode MOSFET PT4410 Date:2011/05 www.htsemi.comsemiconductor JinYu
30V N-Channel Enhancement Mode MOSFET PT4410 Date:2011/05 www.htsemi.comsemiconductor JinYu