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SHARP ELEK/ MELEC DIV LSE D I 6180798 O00e770 § I Phototransistors PT431/PT431F PT. 431 /PT. 431 F Narrow Acceptance, High Sensitivity Phototransistor T-41-63 @ Features @ Outline Dimensions (Unit : mm) 1. Narrow acceptance epoxy resin package 3 (46: TYP. +13") ali 2.0, 2. High sensitivity (PT431 Ic ; MIN. 2mA, dor “Ye BO 52, 0.4 PT431F Ic : MIN. 1.3mA at E,=0.lmW/ . is tf cm?) I Fi raat | Epoxy resin 3. Visible light cut-off type : PT431F “ts} Al 3 ™@ Applications S| Hy 3 1. Copiers, Printers, automatic vending 3 £ © machines S| a 2, VCRs, cassette decks o45_f] N 3. Optoelectronic switches, optoelectronic ~ | | ~ counters | 54 ® sg : aT ff © Enitter ® @ Absolute Maximum Ratings (Ta=25'C) Parameter Unit Collector-emitter voltage [Veeo | 35 | V Emitter-collector voltage |" Veco _| 6 | V . Collector current J ic [50+ mA . Collector power dissipation | Pe__| 75 | mW Operating temperature [Tow | —25~+485]} “Cc . Storage temperature c *'Soldering temperature [To | 260 | c *1 For 3 seconds at the position of 2.5mm from the bottom face of resin package : ™@ Electro-optical Characteristics (Ta=25'C) Parameter [ Symbol [ "Conditions| MIN. | TYP. [MAX] Unit “Collector current [2 [= = ma : | 13 [80 [ma Collector dark current [Neco [Vee=10V, Be=0 = a - 1iGollector-emitter saturation voltage | Venu [Te=25mA, B.=ImW/en? | _— | =] -i9| Vv Peak sensitivity a | =" [800 |" = om wavelength a Response time (Rise) re =1000 -—_| 8 = Tas Response time (all) [Ta | eNom, Reon Pp #2. E, : Irradiance by CIE standard light source A (tungsten lamp) 98. ooo SHARP 196

j SHARP ELEK/ MELEC OIv “USE of 6140798 0002771 74 : Phototransistors PT431/PT431F Fig. 1 Collector Power Dissipation vs. Fig. 2 Collector Dark Current vs. Ambient Temperature Ambient Temperature 2 o}—— z SRaa a T-41-61

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: 3 aq 2 = sof [| TT \\ I = === 5 2 2 ow | sad | [| | JT} i a —25 0 25 50 8 100 —25 0 25 50 75 100 Ambient temperature Ta ('C) Ambient temperature Ta ('C) Fig. 3 Relative Collector Current vs. Fig. 4 Collector Current vs. irradiance Ambient Temperature (PT431) ms - 50 Coo s | 7 a Zz a : ell z & 4th a oe EZ 5 | 5 /| B EES eee i PEt 8 | A! | | - Cooma eon g i — § + OT Pie TT LTE TT Ambient temperature Ta ((C) Irradiance E, (mW/em*) Fig. 5 Collector Current vs. Irradiance Fig. 6 Collector Current vs. (PT431F) Collector-emitter Voltage (PT431) Son =v coo % ry

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SHARP ELEK/ MELEC DIV use 0 ff 8180798 ooua772 9 ff Phototrdansistors PT431/PT431F te NSN T-41-61 ca Fig. 7 Collector Current vs. Fig. 8 Spectral Sensitivity (PT431) Collector-emitter Voltage (PT431F) 16) — 100) begga LTT VN Zz 10 sr TT | g fl i) Po LIELITI bel aS =z 60 iteeoe PIL SEs! belt ° xa SP 4nGeeae [oo oh ZI \\ % 2 4 6 8 W 12 400 600 Cry 1000 1200 Collector-emitter voltage Vee (V) Wavelength A (nm) Fig. 9 Spectral Sensitivity (PT431F) Fig. 10 Response Time vs. 100, so Load Resistance tesesc] VT T 500 toma sei ieee esti LT TT AN oe HA Eee s a 200 HH al g . 3 rool AT Fat Pee Sere ton LITT) Maa ii ssc cilieemeiii § J COLL 3 EEE 2 “CCT a olla HE HERE LT} yyy | 1 a %D Coy Co} 1000 1200 1510-20 ‘50 100200 “S00 1000 Wavelength 4 (nm) Load resistance R, (0) Test Circuit for Response Time Fig. 11 Sensitivity Diagram (Ta=25'C) Z aS . Output Input A SA 2 PE. DOD ROCX i nT eee cia ~ 0

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Phototransistors T-41-61 PT431/PT431F Fig. 12 Collector-emitter Saturation Fig. 13 Collector-emitter Saturation Voltage vs. Irradiance (PT431) Voltage vs. Irradiance (PT431F) EN ER : 4H 5 z |Né ell} ETTAI EY BM E 12) £ 12 | | iz STEHT eo TTI Py ol THINS ge SIMA Sg Zi Fee 23% thee 3: Ul Ta 8 I Irradiance E, (mW/cm*) Irradiance E,. (mW/cm?) Fig. 14 Relative Output vs. Distance Fig. 15 Collector Current vs. (Emitter : GL430) Iluminance (Reference) = [PT 49} [) Sharp PLR: ere eatatt ees a dill mal Distance to emitter d (mm) Iiluminance under fluorescent lamp ( &x) a 199