PT430 SHARP | Alldatasheet

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SHARP ELEK/ MELEC DIV 45€ D J 4180793 ooo27EL 3 I Phototransistors PT430/PT430F i PT430/PT430F Narrow Acceptance T-+t/-6/ . Phototransistor @ Features ™ Outline Dimensions (Unit : mm) 1. Narrow acceptance epoxy resin package Ae (A@: TYP. +13°) me 20 2. Visible light cut-off type : PT430F 4002 wie ROX 150 0.41 ee 6 ™@ Applications 4 alps be Epoxy resin 1. VCRs, cassete tape recorders tthe Ts) 2. Optoelectronic switches, optoelectronic od aI counters ed * 3. Automatic stroboscopes 2 | 2 @ 0.45, H 3 04 ff ~ | | ‘ 2.54. | ® 8° 8 lA Se @® Collector LO} @ @ Absolute Maximum Ratings (Ta=25°C) Parameter Unit Collector-emitter voltage Vv Enmitter-collector voltage | Veco | 6 [| V Collector current | ie | 20 | mA Collector power dissipation | Pc__| 75 (| mW Operating temperature =25~+85] °C Storage temperature ‘c *' Soldering temperature [ To | 260 | C . *1 For 3 seconds at the position of 2.5mm from the bottom face of resin package ™@ Electro-optical Characteristics (Ta=25°C) Parameter [Symbol [ "Conditions MIN. TYP. [MAX] Unit : “Collector current | Wee=5V [04 | 17 [760 [ma onector cures PT430F «| E.=1mW/em? [025 | 08 [ 30 | mA Collector dark current | Tewo | Vee=20V, =O = Po [ao | A *?Collector-emitter saturation voltage I,=0.5mA, E.=10mW/em?* | — [oi [oa fv Peak sensitivity PT430 1 | — [800 | — [am wavelengh PT430F . | — | 860 | — [am Response time (Rise) Je Vy cav, e=ama, Re=t00a |=} 8 | = [as Response time (Fall) [= [3s [= Tus #2 Ey : Irradiance by CIE standard light source A (tungsten lamp) =o... Cs — SHARP 192

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| ee MEM , eee Yon 600 800 1000 “1200 ‘ Teton ter valane vy Wavelengh A (nm) Collector-emitter voltage Ve (V) » Load Resistance Fig.9 Spectral Sensitivity (PT430F) Fig. 10 Response Time vs. a 100) Sasi esas [teas] Vee=2V FEE Hee a oP 3 of Ee ate . 3 | CHHICHHH ro NZQA)

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  • ee nC ORES Sie LEON Se 2ST. Cee aa teenie oa oe SHARP ELEK/ MELEC DIV 35e 0 ff-s1a07%8 coo27E9 9 Phototransistors T-41-61 PT430/PT430F Fig. 12 Collector-emitter Saturation Fig. 13 Collector-emitter Saturation - 14 Voltage vs. Irradiance (PT430) 14 Voltage vs. Irradiance (PT430F) te a i AEH Tanase cae eT cae re TT | ee dN MT y Bo ; z. “HITCH + oA MU IIMS SCNT 3 ha 82 ll oni Irradiance E, (mW/cm*) Irradiance E, (mW/tm*) Fig. 14 Relative Output vs. Distance Fig. 15 Collector Current vs. (Emitter : (GL430)) Illuminace (Reference) _ SOFTEN HEH 500 ET BTHSOA TH Light source : A = Fe ‘White fluorescent lamp | HHING = ac = ay & SEA F A AEH i ttt puts of transparent resin = Cn TN 5 FTTH mole ee Dhottrans © LOM TAI UN 3 MESS Prony I let noted SScriii esti =ee| stati "Distance to emitter (ram) Iluminance under fluorescent lamp (¢x) TTT TTT TTT RR