PT4120 SHARP | Alldatasheet

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Outline Dimensions (Unit : mm) Absolute Maximum Ratings PT4120 PT4120 Side View and Thin Flat Type 2-Phase Output Phototransistor 1. 2-phase PT output type (Read pitch : 0.94 mm) 2. Compact, thin and flat package 1. Mouses 2. Track balls 3. Encoders Parameter Symbol Rating Unit Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector current I C 20 mA Collector power dissipation P C 75 mW Operating temperature T opr -2 5t o +8 5 ˚C Storage temperature T stg -4 0t o +8 5 ˚C Soldering temperature*1 Tsol 260 ˚C *1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge 3.0 PT B PT A1.4 3.9 1.5 4.0 16.5±1.0 (2.54) (1.7) 0.8 2-C0.5 6˚6˚ 2.8 6˚ 6˚ 0.81 0.17 0.470.47 0.94 0.7 0.7 1.8 4˚4˚ 4˚4˚ 1.0 2.0 0.15 (1.5) 12 3 1.4mm 0.3MAX.0.8MAX. MAX.0.1 3-0.45+ 0.3 - 0.1 3-0.4+ 0.3 -0.1 18.0+ 1.5 -1.0 56˚± 5.0

1 Emitter (PT A)

3 Emitter (PT B)

  • Tolerance :± 0.2 mm Shape of detector portion Rugged resin Gate burr Transparent epoxy resin Rugged resin 0.2MAX. Soldering area

2 Collector (common)

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n nn

(Ta = 25˚C) PT4120 Electro-optical Characteristics *3 Terminals other than test terminal shall be released. Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Dark Current vs. Ambient Temperature -25 0 25 50 75 100 0 2 55 07 5 1 0 0

5 V CE = 20V

*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)ve Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector current I C EV = 1 000 lx*2 0.45 - 1.8 mAV CE =5 V Dark current I CEO Ee = 0,VCE = 20V*2 - - 0.1 µ A Collector-emitter saturation voltage V CE(sat) EV = 1 000 lx*2 - 0.1 0.4 VIC = 0.1mA Collector-emitter breakdown voltage BV CEO IC = 0.1mA 35 - - VEe =0*2 Emitter-collector breakdown voltage BV ECO IE = 0.01mA 6--VEe =0*2 Peak sensitivity wavelength λ p - 800 - nm Response time Rise Time t r V CE = 2V,IC = 2mA - 3.0 - µ s Fall Time t f - 3.5 - µ sR L = 100Ω 2-element I variationC RI C(a)/IC(b) 0.7 - 1.3 - Collector power dissipation PC (mW) Dark current ICEO (A) Ambient temperature Ta ( ˚C) Ambient temperature Ta ( ˚C) n

0.1 0.5 V CE =5 V V CE =5 V Fig. 3 Relative Collector Current vs. Ambient Temperature EV = 1 000 lx Fig. 4 Collector Current vs. Illuminance 0.0 1.0 2.0 5.0 10.0 20.0 10 20 50 100 200 500 1000 2000 0.2 0.4 Ev = 1 000 lx 0.6 0.8 1.2 1.4 1.6 750 lx 500 lx 250 lx 100 lx 400 500 600 700 800 900 100 Ta = 25˚C 11001000 Wavelengthλ (nm) Fig. 6 Spectral Sensitivity 0.1 0.2 0.5 2 5 10 100 V CE =2 V Ta = 25˚C tf tr tr tf Ic = 2mA Load resistance RL (kΩ ) Fig. 7 Response Time vs. Load Resistance 51 0 1 5 tr R L tf 10% 90%Vcc OutputInput Output Test Circuit for Response Time Fig. 5 Collector Current vs. Collector-emitter Voltage Response time tr,tf (µ s) Ambient temperature Ta (˚C) Illuminance E V (lx) Relative collector current (%) Collector current Ic (mA) Collector-emitter voltage VCE (V) 20 25 30 35 Collector current Ic (mA) Relative sensitivity (%) Ta = 25˚C

Please refer to the chapter "Precautions for Use". (Page 78 to 93) Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance Fig. 10 Relative Output vs. Distance (Detector : GL4100) 0.2 0.4 0.6 1.0 1.2 1.4 IC =0.05mA Collector-emitter saturation voltage VCE(sat)(V) Irradiance Ee (mW/cm 2) Relative output (%) 0.8 1.6 1.8 10 100 1000 IC =0.6mA IC =0.4mA IC =0.2mA IC =0.1mA Distance between emitter and detector d (mm) 11 0 100 100 Ta =25˚C 0.1 0.01 0.1 l