PT370 SHARP | Alldatasheet
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| SHARP ELEK/ MELEC DIV 15€ 0 J 8280798 OODe758 4 | H Phototransistors T370/PT371/PT372 a -4l- G1 PT370/PT371/PT372_ Gompect. Stem Tyee 74) 3 Phototransistor ™@ Features ™@ Outline Dimensions (Unit : mm) 1. 3mm compact, resin stem type noes PT370/PT371 2. Acceptance PT370 A 6: TYP. +45° Transparent p08 ) PT371 46: TYP. +65° “sn UWI FI . PT372 4.6: TYP. +70" wack PLN [eh ° x “3. Single phototransistor output: PT370/ resin |: | Sua : PT371 i BRR | Darlington phototransistor output: PT372 oan At faa ® ; @ Applications | PT372 j . A Mark 4 1} | 1. Floppy disk drives PT370: None i 2. VCRs, PT371: Red i i 3. Automatic stroboscopes P7372: Black Ls : 4. Optoelectronic switches, optoelectronic ‘ counters 0.9, : @ t . “Ly eo @ Collector oo © Emitter Parameter Unit : Collector-emitter voltage [Veo | 35 ‘| Vv Emitter-collector voltage [Veco | 6 | V [20 | cateorcnet Frere | «gm Collector power dissipation [Pe | 75] So mW Operating temperature c Storage temperature c *'Soldering temperature [To | 260 | C %*1 For 3 seconds at the position of 1.5mm from the bottom face of resin package SS SHARE 184
- — ——EEEE— — : — : i SHARP ELEK/ MELEC DIV 1SE of 8140798 0002759 of . Phototransistors T-41-61 . 1370/PT371/PT372 . LL ~41- ——— @- Electro-optical Characteristics T-41-63 (Ta=25'C) Parameter Conditions MIN. Unit “Collector current | PT371 Ie | Bv=100%Vee=sv [400 f= | 900] “* Collector dark 7370/PT371 E.=0, Vee=20V nA sctol current. PT372 E.=0, Vee=10V. f — | — [10 [vA Collector-emitter PT370/PT371_| E=lOmW/em’k=0sma | — | 02 | 04 | Vv saturation voltage cea TOES ImWem,1e=25mA | — | 08 | 10 | Peak sensitivity wavelength [ap | — ——*| = | a0 | — | nm. ‘ PT370/PT371 Ve=20V.b=imAR=ika; — | 10 | 40 | xs Response time (Rise) Fpr372 fe | Vaz2V, k=10mA,R,=l000) — | 100 | 400 | ys i PT370/PT371 Vee=20V, k=ImA,R=1kO| — | 8 | 35 | us Response time (Fall) 57379 te [yq=2V,k=l0mA, R.=1000| — | 100 | 400 | us Halt intensit PT370 | = [#45 [= | le [=| #65 | =| deg. PT372 | — 270 T= | %*2 The collector current (Ic) shall be classified into the ranks as follows before delivery. ” Rank Collector current Te PT370 (WA) | PT371 (A) | PT372 (mA) B 170~320 192~463 7.14~23.0 D ai9~900_ [= = %*3 Ey, By: Illuminance, irradiance by CIE standard light source A (tungsten lamp) Fig. 1 Collector Power Dissipation vs. Fig. 2 Collector Dark Current vs. Ambient Temperature Ambient Temperature (PT370/PT371) 80) 10 ee va = oI] | | wf Zt ee ee 4 5 a ———— 2 20 \\ ——— ep tT fT TK Fo At S i a ee cc s [tt tT Tt | FP a | ‘S02 60 75 100 ° 5 50 i 100 Ambient temperature Ta (‘C) Ambient temperature Ta (‘C) a SHARE 185
. = = = Ss ' SHARP ELEK/ MELEC DIV 45€ 0 [J 8180798 oo02740 af Phototransistors . PT370/P1371/PT372 Ambient Temperature (PT372) Ambient Temperature (PT370/PT371) 10 — es > 160 sr ee g wibamx | ge s & _—_S— a a 2 ——— g 8 = — = ee = ==== ee 2 ign ——— | 2 40 -B 0 % 80 75 100 % Fy 30 75 100 Ambient temperature Ta (‘C) Ambient temperature Ta (‘C) Fig. 5 Relative Collector Current vs. Fig. 6 Collector Current vs. Irradiance Ambient Temperature (PT372) (PT370/PT371) 17 - a eae 4 z4 Pt PT YE EL TY 3 125) 3 L Pet vet} bP TA S100 e 2 tye | Le ZEIT Yr oso a a °F 2 > 73 0 Ambient temperature Ta (C) Irradiance E, (mW/cm*) Fig. 7 Collector Current vs. Irradiance Fig. 8 Collector Current vs. 100 1372) Collector-emitter Voltage (PT370) rrr — ttle Hi en aa . q Sen ame 8 I . Toh ITE t+
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| ee oa LUTTE CTE TTT Atti tt ttt) 0.01 01 1 10 0 5 10 18 20 Irradiance E. (mW/em*) Collector-emitter voltage Vee (V) 186 s P
SHARP ELEK/ MELEC DIV 1SE of 6180798 O002?b1 uf Phototransistors 1-41-61 T1463 _ PT370/PT371/PT372 Fig. 9 Collector Current vs. Fig. 10 Collector Current vs. _ Collector-emitter Voltage (PT371) Collector-emitter Voltage (PT372) i 25) sfecrioiegst—|—t |] = whiten’ i tT Peet of NI ae el =o (rare : (ECs TT TTT | BU fewtiot LS ety | a 5 [ee LY Saft estoy fd 2 eee a ee (ee ftir t et 0 5 10 15 20 Collector-emitter voltage Vee (V) Collector-emitter voltage Vce (V) Fig. 11 Spectral Sensitivity Fig. 12 Response Time vs. Load Resistance a &P7370/PT371) “rm=aey [7\\T 1 _] Vegnaov ae oLr ity} \\ 2 EE et > | TIZLLAN LL > Eee 2 ood TT eT ce e/a ae | 211 | 2 4 2 OSS Seeaty 4 i A ce 0 a a | | Y | tii A Tn (7 TN EE TT 400 500600700800 900 =—1000 1100 . 1 2 5 10 20 30100 Wavelength A (nm) Load resistance R, (kQ) Fig. 13 Response Time vs. Load Resistance Test Circuit for Response Time (PT372) 1000 er estas p370 #% Output oq) Vct2¥, FH rH PT371 Input : oti
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_ SHARP -ELEK/ MELEC DIV SE Df 8280794 OO0e7b2 & Ef _ , Phototransistors T-41-61 T-41-63 PT370/PT371/PT372 Fig. 14 Sensitivity Diagram (PTs7) Fig. 15 Sensitivity Diagram (PT371) (Ta=25°C. (Ta=25°C) > aa Se ae OAT, acs Keene ermine C6Se HAY P&H PAAR ft meee Benes ~60 Kx | +60 ORY, oe TX ere REDO “MERA 5
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BARRE NSN, 2eaee S Re meses 2caae Angular displacement 6 Angular displacement @ Fig. 16 Sensitivity Diagram (PT372) Fig. 17 Collector-emitter Saturation : : — (Ta=25°C) ; 10 Voltage vs. Irradiance (PT370) Roa Ny TLE T TT PE ae NS : MEO Pt lof POU ay a aOR Hee gk “ITI WSS ee TASH 2 dK EI ICE ASH HRT of KAY WOOP rw fe WIT . -0| RRR EON ee i RAT | TT |
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Angular displacement @ 2 ee Tl Irradiance E, (mW ‘cm*) Fig. 18 Collector-emitter Saturation Fig. 19 Collector-emitter Saturation 10 Voltage vs. Irradiance (PT371) 29 Voltage vs. Irradiance (PT372) ‘[Weleke Te [tee] ot TTT) > HEE SEA 2 CUI Conn TERETE yA SHISITAL SII sea FEET | EH see u at LL eof Ltt fT tt TT 5 TC TATIRA ECHR oF ES A ee i i of COT Cn , Irradiance E, (mW/cm*) ° Trradiance E, (mW/cm*)