PT360 SHARP | Alldatasheet

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SHARP ELEK/ MELEC DIV SE D ff 8180798 oooe7se 3 ff Phototransistors PT360/PT360F . T- 41-6! ; PT3860/PT360F compact type Phototransistor ™@ Features ™ Outline Dimensions (Unit : mm) 1 oe. ine compact type epoxy resin Epoxy resin 2. Intermediate acceptance(A 6: TYP. +20°) . 2 3. Lead pins space: 2.54mm . 2 4. Visible light cut-off type: PT360F gh [I 20 7 Applications & | 085 at 3) 055 1. VCRs, Video camera a) rr ° 2. Floppy disk drives We} 3. Optoelectronic switches | aN uyju 8 PT360/ 045, | il PT360F i ° g bs © Emitter Fi - ® Collector = Hei 4 | PT360_| Transparent resin | old ™@ Absolute Maximum Ratings (Ta=25°C) Parameter Unit Collector-emitter voltage | Veo [| 35 | V Emitter-collector voltage [Veco | 6 | V . Collector current [i | 20. | mA Collector power dissipation | Pe | _50._| mW Operating temperature c Storage temperature °C “Soldering temperature [Tn | 260 | %*1 For 5 seconds at the position of 2.6mm from the bottom face of resin package . ™@ Electro-optical Characteristics (Ta=25'C) Parameter | Symbol | _Conditions_ [| MIN. [ TYP. [MAX.] Unit “Collector current Ves=5V, Ev=100 & (E,=0.52mW/em) | 75 | 200 | 420 | wA Collector dark current | Tero [ Vee=20V,Be=0 | — ‘ato | 10-7 | A {*Colletoremiter saturation votage | Verwn | Te=0.5mA, Be=10mW/em* | — | 02 | 04 | V Peak sensitivity [PT360_[" [| = [800 | =" [am wavelength . | =" [860 [= [nm Response time (Rise) | tr__ | Vce=20V, I-=1mA [— | 10 | 40 | Response time (Fall) Ru= Ika ae *2 By, Ey: Mluminance, irradiance by CIE standard light source A (tungsten lamp) =: ct SHARE 178

i SHARP ELEK/ MELEC DIV LSE D | 6180798 0002753 §& I : Phototransistors 1-41-61 PT360/PT360F i Fig. 1 Collector Power Dissipation vs. Fig. 2 Collector Dark Current vs. Ambient Temperature _Ambient Temperature 5 so ” fra-w___ s es es SS - 2° wtf + A Hl x0 zy | = § HEA} 5 | a” El Z| | 5 3 4 A | | é [ee oo 258075 100 05 Fg 30 % 700 Ambient temperature Ta (C) Ambient temperature Ta (‘C) H Fig. 3 Relative Collector Current vs. Fig. 4 Collector Current vs. irradiance Ambient Temperature 5 : 160) = g,, | [| gq ie Pi] | AT ogi af yy °% 25 30 75 100 0 25 5 75 10 Ambient temperature Ta (C) Irradiance E, (mW/cm*) ' Fig. 5 Collector Current vs. Fig. 6 Spectral Sensitivity Collector-emitter Voltage \\tremeT TT TT “Te TT] 210+ | | tT a VAT > ae Fs a a Sole] s Cea

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| SHARP ELEK/ MELEC DIV LSE of 8140798 O00e754 74 Phototransistors 1-41-61 PT360/PT360F : Fig. 7 Response Time vs. Load Resistance Test Circuit for Response Time 200 oo ee COUT Yi r . Tanase FER Oo Input

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os ations: UTI Vee R. ===H7}-90%6 2 cco A TT TTT) ETI TT 1 2 5 10 20 50 100 Load resistance R. (0) Fig. 8 Sensitivity Diagram = (7,=25c) Fig. 9 Collector-emitter Saturation Voltage “w= tr 943 ltradiance CoA. ; ESSE Kt Lo a PATA a “CIA OHO) IEICE KX iH rk & oat 12. l RSS) PRISE NSS Ni oon Cae ae ERS Se RSE SS =CEBNize re LL Pree i Angular displacement @ radiance Ee (mW) 180