PR5020 PREMA | Alldatasheet

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Technical content

3 compact Silicon Junctions on a single Die PR5020 and PR5021 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and the PR5021 are symmetrically designed. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package.

FEATURES

  • 3 photodiodes for higher variability
  • low dark current
  • varied spectral sensitivities
  • anti-reflective coating (ARC) TYPICAL APPLICATIONS
  • LASER beam alignment
  • position detection
  • ambient light detection PR5020 PR5021 CIRCUIT SPECTRAL SENSITIVITY © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 1/8

Electrical and optical Characteristics ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Units VC-A V(C1, C2, C3) — V(A) -0.3 35 V TA operating ambient temperature -40 85 °C TS storage temperature -40 85 °C Tpeak soldering peak temperature 260 °C Ptot total power dissipation 100 mW

ELECTRICAL CHARACTERISTICS

Ta = 27°C Symbol Parameter Conditions Min Typ Max Units Tamb operating temperature range -40 85 °C Vr (C-A) reverse voltage V(C1, C2, C3) - V(A) 30 V APD active area (geometrical) PR5020 PR5021 C1/C3 C1/C3 0.246 0.496 0.394 0.195 mm² mm² mm² mm² Id/A dark current @ Vr (C-A) = 1 V & Tamb = 60°C PR5020 PR5021 C1/C3 C1/C3 pA pA pA pA Id/A dark current @ Vr (C-A) = 30 V & Tamb = 60°C PR5020 PR5021 C1/C3 C1/C3 125 110 pA pA pA pA ∆Id/∆T temperature coefficient of Id @ Tamb > 60°C Vr (C-A) = 1 V Vr (C-A) = 30 V %/K %/K λpeak peak sensitivity wavelength 830 nm Speak peak sensitivity 0.58 A/W Cj0 zero-bias junction capacitance, f = 1 MHz PR5020 PR5021 C1/C3 C1/C3 pF pF pF pF © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 2/8

Dark currents of the C1-, C2- and C3-photodiode are measured as a function of reverse voltage and temperature. The substrate (A) is connec - ted to ground, while a positive voltage is ap - plied to Cx. The dark currents of Cx are meas - ured at each pin separately. OVER TEMPERATURE Dark currents for photodiodes of different size in PR5020 are shown at reverse voltages of 1 V (blue) and 30 V (orange). In general, dark cur - rents rise by approximately a factor 10 every 20 °C. Due to edge effects, bigger photodiodes show a smaller leakage current per area. AS A FUNCTION OF REVERSE VOLTAGE The following diagram shows the dependency of dark currents of the smaller C1/C3 (lower curves) and the bigger C2 (upper curve) of PR5020 on reverse voltage at different temper - atures. © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 3/8

Electrical and optical Characteristics SENSITIVITY AFFECTED BY REVERSE VOLTAGE The spectral sensitivity increases by a few per - cent when reverse voltages are applied to the photodiodes. The diagram shows the relative deviation of the photocurrent to the zero-bias value. The devi - ation changes insignificantly when illumination is changed. Neither the size nor the position of the photodiodes affect the deviation signific- antly. Please notice that the relative deviation in- creases if the adjacent photodiode is not biased. In that case also the size of the photodi - ode and the illumination affect the difference in photocurrent measured with increased reverse voltage. CAPACITANCE The diagram illustrates the dependency of the capacitances on the applied reverse voltage of the PR5020 (orange) and the PR5021 (blue). Both types have two identical photodiodes C1 and C3 (dashed lines) and a single photodiode C2 located in the center of the dies (solid lines). The capacitances of the photodiodes are pro - portional to their area and decrease with re- verse voltage due to the reduction of the space- charge region. Taking the area of each photodiode into ac- count leads to a capacitance density of about 157 pF/mm2 at zero reverse voltage. The de- crease of the capacitance with increasing re- verse voltage is identical for all photodiodes and shown in the inset. © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 4/8

The crossover of a light beam between photo- diodes is illustrated. Increments of 10 µm were performed using red light and a diameter of 50 µm. The position of 0 µm corresponds to the center of the die. The photocurrent was mea - sured with zero applied voltage. Considering a gap between the photodiodes of 27 µm, the observed behaviour is consistent with a sharp channel separation. POSITION DETECTION By shining light on aperture, the passing light can be detected. As given in the schematics above, three different segments can be resolved using PR5020/21. Due to the geometry of the photodiodes, the position of the aperture can be detected as given in the diagram. Of course, the principle can be transferred to encoder discs to obtain angular resolution: © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 5/8

LAYOUT AND PIN CONFIGURATION Pin No. Pin Name PIN Function Description

1 A Common Anode

2 C2 Cathode photodiode 2

3 C3 Cathode photodiode 3

4 C1 Cathode photodiode 1

PACKAGE DIMENSIONS (ODFN) MIN TYP MAX Unit A 0,85 0,9 0,95 mm A3 0,20 REF. mm b 0,35 0,4 0,45 mm D 2,8 2,9 3 mm E 1,7 1,8 1,9 mm e 1,4 BSC* mm L 0,6 0,7 0,8 mm * Basic Spacing Between Centers © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 6/8

Package Information

A lead-free solder profile with a peak temper - ature of 260°C or less, according to J-STD-020 should be followed. Parts should be handled in accordance with the moisture sensitivity level as indicated on the moisture barrier bag, but at least to MSL 3. Any parts without or with unsealed moisture barrier bag must be dry-baked according to JEDEC guidelines before soldering. Manual soldering must be done with utmost care. Direct infrared heating should be avoided; pure convection heating is recommended. TAPE & REEL Reel diameter: 7“ (178 mm) Tape width: 8 mm Quantity per reel: 3,000 Packaging: moisture barrier bag Orientation of ICs in tape: Pins 3 and 4 towards sprocket holes BARE DIES PR5010 is available as bare dies on request on tested and sawn wafers or in wafflepack. Please contact us for minimum order quantities and delivery times. © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 7/8

Information provided by PREMA is believed to be accurate and correct. However, no responsibility is assumed by PREMA for its use, nor for any infringements of patents or other rights of third parties which may result from its use. PREMA reserves the right at any time without notice to change circuitry and specifications. Life Support Policy PREMA Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval of PREMA Semiconductor. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PREMA Semiconductor GmbH Robert-Bosch-Str. 6

55129 Mainz Germany

Phone: +49-6131-5062-0 Fax: +49-6131-5062-220 Email: prema@prema.com Web site: www.prema.com © PREMA Semiconductor GmbH 2018 I rev. 5119 Page 8/8