PR5010 PREMA | Alldatasheet

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Technical content

2 compact Silicon pn Junctions with a common Cathode PR5010 is a double silicon photodiode with two symmetrical anodes (A1/A2) and a common cathode (C), sensitive for visible light. The cathode forms an additional photodiode to the substrate (Sub) that is sensitive for infrared light. Key features are the low dark current combined with a high sensitivity and an anti-reflective coating on the die. PR5010 is available in an optical DFN package with a very small form factor.

FEATURES

  • common cathode
  • low dark current
  • varied spectral sensitivities
  • anti-reflective coating (ARC) TYPICAL APPLICATIONS
  • Laser beam alignment
  • Optical encoders
  • Position detection
  • Ambient light detection KEY CHARACTERISTICS Parameter Typ Unit Package size 2.9 x 1.8 x 0.9 mm A1, A2 photodiode size 0.91 x 0.62 mm A1, A2 peak wavelength 630 nm A1, A2 dark current @ 27°C 8 pA Capacitance A1 / A2 @ 10V Sub @ 10V pF pF CIRCUIT SPECTRAL SENSITIVITY © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 1/7

Electrical and optical Characteristics ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Units VC-A V(C) — V(A1, A2) A1, A2 -0.3 38 V VC-Sub V(C) — V(Sub) Sub -0.3 33 V TA Operating ambient temperature -40 85 °C TS Storage temperature -40 85 °C Tpeak Soldering peak temperature 260 °C Ptot Total Power Dissipation 100 mW

ELECTRICAL CHARACTERISTICS

Ta = 27°C, unless otherwise noted. Symbol Parameter Conditions Min Typ Max Units Vr (C-A) reverse voltage V(C) — V(A1, A2) A1, A2 33 V Vr (C-Sub) reverse voltage V(C) — V(Sub) Sub 28 V APD active area (geometrical) A1, A2 Sub 0.564 1.205 mm² mm² Id dark current A1, A2 Sub A1 / A2 @ Vr = 2V Sub @ Vr = 2V pA pA ∆Id/∆T temperature coefficient of dark current A1, A2 Sub A1 / A2 @ Vr = 2V Sub @ Vr = 2V 12.0 10.5 %/K %/K λpeak peak sensitivity wavelength A1, A2 Sub 560 875 nm nm Speak peak sensitivity A1, A2 Sub 0.28 0.39 A/W A/W Cj0 zero-bias junction capacitance A1, A2 Sub Vr = 0V, f = 1 MHz Vr = 0V, f = 1 MHz 160 pF pF Cj biased junction capacitance A1, A2 Sub Vr = 10V, f = 1 MHz Vr = 10V, f = 1 MHz pF pF © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 2/7

Electrical and optical Characteristics PHOTODIODE STRUCTURE Due to the special structure of the PR5010, it contains two diffferent types of photodiodes, collecting photo-electrons at different depths. Photodiodes A1 and A2 are located near the sil - icon surface, while photo-electrons that are generated deeper in the substrate are collected at the Sub Pin. This leads to different spectral sensitivities of A1/A2 and Sub photodiodes. While PR5001 can be used as a dual photodiode with common anode, dumping the photocur- rent of the Sub to ground, the properties of the Sub photodiode can be exploited as well. CAPACITANCE The dependency of the capacitance between A1 or A2 and C on the applied reverse voltage V(A1) —V(C) or V(A2)—V(C) is shown in orange. The ca - pacitance of the photodiode between C and the silicone substrate (Sub) as a function of V(C) — V(Sub) is given in blue. While the bigger diagram illustrates the abso - lute numbers, the normalized capacitance is shown in the inset. It can be seen that a re - verse voltage of about 3 V already reduces the capacitance by a factor of 2 compared with zero bias. SENSITIVITY AFFECTED BY APPLIED VOLTAGES The difference of photo-currents detected by varying the reverse voltage of the photodiodes A1/A2 and the substrate voltage (-4 V, -8 V and -16 V) is illustrated. Three levels of illumination (blue, black and orange) are applied. For zero reverse voltage and a substrate voltage of -16 V, photo-currents of 1353 nA, 885 nA and 120 nA are obtained. It can be seen that enhancing both voltages leads to slightly enhanced photo- currents. While the absolute difference in - creases with illumination, the relative deviation is at most ~1,5% for high illuminations. © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 3/7

Dark currents of A1, A2 and Sub photodiodes are measured as a function of the reverse voltage V(C)—V(Sub) and of temperature. A1, A2 and Sub are connected to Ground, while a posit- ive voltage is applied to C. The dark current of A1 can be obtained by subtracting I(A1 — Sub) — I(C — Sub). OVER TEMPERATURE Dark currents of single photodiodes A1 or A2 are illustrated as dashed lines. By taking the dark currents of A1 and A2 into account, the dark currents of the photodiode between the N-well (C) and the substrate (Sub) can be calculated. For varied applied reverse voltages, these are shown as solid lines. AS A FUNCTION OF REVERSE VOLTAGE For varied applied temperatures, dark currents of single photodiodes A1 or A2 are illustrated as single points. Again, the dark current between the N-well (C) and the substrate (Sub) are shown as solid lines. Both diagrams rely on the same numbers but illustrated differently. © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 4/7

NEGATIVE VOLTAGE AT THE SUB PIN The cathode of the photodiodes A1/A2 is formed by an N-doped well (C) that has also a parasitic photodiode to the silicon substrate. Under all circumstances, the Sub pin must be connected to a voltage that is more negative than the po - tential at C. The Sub pin must not remain uncon- nected. A1 and A2 must be connected to a voltage equal or more negative than connected at C. APPLICATION EXAMPLE The application example shown here can detect photons generating free carriers within and be - low the N-well (orange). A reverse voltage between C and A1/A2 reduces the capacitance of A1 and A2. Measuring the photocurrent at each pin gives a spacial resolution. The reverse voltage between the common cathode (C) and the substrate (Sub) influences properties as ca - pacitance or dark current of the photodiode be - low the N-well. In the application example, the photocurrent of the shallow photodiodes A1 and A2 can be measured separately from the deep Sub photo - diode. EDGE DETECTOR The evaluation of the photo-currents detected at A1 and A2 can be used to measure the correct position of an object. If the object is right between both photodiodes, the difference of both signals is at maximum. CHANNEL SEPARATION The following diagram shows the crossover of a light beam between both photodiodes A1 and A2. A light beam with a diameter of 100 µm and a wavelength of 660 nm (red) was moved in in - crements of 10 µm over the gap between A1 and A2. The position of 0 µm corresponds to the centre of the die. Considering the beam diameter of 100 µm and a gap between both photodiodes of 80 µm, the observed behaviour is consistent with a sharp channel separation. Neither the substrate bias (Vsub) nor the A1/A2 bias voltages VA1/A2 have a sig- nificant influence on the results. © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 5/7

Package Information

Pin No. Pin Name PIN Function Description

1 C Common Cathode

2 Sub Anode photodiode 'Sub'

3 A2 Anode photodiode 'left'

4 A1 Anode photodiode 'right'

ODFN-4L – PACKAGE MIN TYP MAX Unit A 0,85 0,9 0,95 mm A3 0,20 REF. mm b 0,35 0,4 0,45 mm D 2,8 2,9 3 mm E 1,7 1,8 1,9 mm e 1,4 BSC* mm L 0,6 0,7 0,8 mm * Basic Spacing Between Centers © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 6/7

A lead-free solder profile with a peak tem pera- ture of 260°C or less, according to J-STD-020 should be followed. Parts should be handled in accordance with the moisture sensitivity level as indicated on the moisture barrier bag, but at least to MSL 3. Any parts without or with unsealed moisture barrier bag must be dry-baked according to JE - DEC guidelines before soldering. Manual solder - ing must be done with utmost care. Direct infrared heating should be avoided; pure convection heating is recommended. TAPE & REEL Reel diameter: 7“ (178 mm) Tape width: 8 mm Quantity per reel: 3,000 Packaging: moisture barrier bag Orientation of ICs in tape: Pins 3 and 4 towards sprocket holes BARE DIES PR5010 is available as bare dies on request on tested and sawn wafers or in wafflepack. Please contact us for minimum order quantities and delivery times. Disclaimer Information provided by PREMA is believed to be accurate and correct. However, no responsibility is assumed by PREMA for its use, nor for any infringements of patents or other rights of third parties which may result from its use. PREMA reserves the right at any time without notice to change circuitry and specifications. Life Support Policy PREMA Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval of PREMA Semiconductor. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PREMA Semiconductor GmbH Robert-Bosch-Str. 6

55129 Mainz Germany

Phone: +49-6131-5062-0 Fax: +49-6131-5062-220 Email: prema@prema.com Web site: www.prema.com © PREMA Semiconductor GmbH 2020 I rev. 3020 Page 7/7